SK하이닉스가 26일 이사회 결의를 거쳐 용인 반도체 클러스터의 첫 번째 팹(Fab)과 업무 시설을 건설하는 데 약 9조 4,000억원을 투자하기로 결정했다. SK하이닉스는 용인 1기 팹에서 HBM 등 차세대 D램 생산에 나선다.
Board of Directors Approves 9.4 Trillion Won Investment Plan
SK Hynix will begin producing next-generation DRAMs, including HBM, at its Yongin 1st fab.
SK Hynix announced on the 26th that it decided to invest approximately 9.4 trillion won in building the first fab and business facilities in the Yongin Semiconductor Cluster after a board of directors resolution.
SK Hynix explained, “We plan to break ground on the first fab in the Yongin cluster in March of next year and complete it in May 2027 as scheduled, and have received the board of directors’ approval for investment prior to that,” adding, “We will make every effort to build the fab in order to lay the foundation for the company’s future growth and to respond in a timely manner to the rapidly increasing demand for AI memory semiconductors.”
The Yongin Cluster, which is being built on a 4.15 million m2 site in Wonsam-myeon, Yongin-si, Gyeonggi-do, is currently undergoing land preparation and infrastructure construction work.
SK Hynix has decided to build four cutting-edge fabs here to produce next-generation semiconductors and establish a semiconductor cooperation complex with some 50 small and medium-sized enterprises from home and abroad.
The company plans to sequentially complete the remaining three fabs after the construction of the first fab, thereby growing the Yongin cluster into a ‘global AI semiconductor production base.’
The investment amount approved this time includes construction costs for the first fab, ancillary facilities, business support buildings, and welfare facilities required for the initial operation of the cluster. The investment period was estimated from August 2024 to the end of 2028, taking into account the design period to prepare for the construction of the fab and the business support building scheduled for completion in the second half of 2028.
The company plans to produce next-generation DRAMs, including HBM, a representative AI memory, at its first fab in Yongin, and has decided to prepare to use the fab for production of other products as needed to meet market demand upon completion.
In addition, SK Hynix plans to build a 'mini-fab' within the first fab to help domestic small and medium-sized enterprises develop, verify, and evaluate technology. The company plans to provide its small and medium-sized enterprises partners with an environment similar to an actual production site through the mini-fab and provide maximum support so that they can improve the perfection of their own technology.
SK hynix Vice President Kim Young-sik (in charge of manufacturing technology) said, “The Yongin Cluster will be the foundation for SK hynix’s mid- to long-term growth and a place for innovation and coexistence that we will create together with our partners.” He added, “By successfully completing the construction of a large-scale industrial complex, our company aims to dramatically enhance Korea’s semiconductor technology and ecosystem competitiveness, thereby contributing to the revitalization of the national economy.”