Infineon Technologies (Korea CEO Seung-Soo Lee) has succeeded in developing 300mm power GaN wafer technology, increasing productivity and efficiency by producing more chips compared to 200mm wafers.

Infineon announced on the 11th that it has successfully developed the industry's first 300mm power GaN (gallium nitride) wafer technology.

This groundbreaking technology is expected to contribute significantly to the growth of the GaN-based power semiconductor market.

300mm wafers can produce 2.3 times more chips per wafer than 200mm wafers, significantly improving productivity and efficiency.

GaN-based power semiconductors are rapidly being adopted in industrial, automotive, consumer, computing, and communications applications, including power supplies for AI systems, solar inverters, chargers and adapters, and motor control systems.

State-of-the-art GaN manufacturing processes lead to enhanced device performance, enabling customers to benefit from efficient performance, smaller size, lighter weight, and overall cost reduction in their applications.

“This remarkable success is the result of Infineon’s innovation capabilities and the dedicated efforts of our global team, which have contributed significantly to our continued growth in the areas of GaN and power systems,” said Jochen Hanebeck, CEO of Infineon.This demonstrates Infineon’s position as an innovation leader in power systems. This technology innovation will change the industry and enable the best use of GaN. Infineon is a leader in power systems, supplying Si (silicon), SiC (silicon carbide) and GaN,” he said.

Infineon has successfully manufactured 300mm GaN wafers on its existing 300mm silicon production pilot line at its power fab in Villach, Austria.

Infineon is leveraging its capabilities in existing 300mm silicon and 200mm GaN production and will expand its GaN production capacity to meet market demand.

A key advantage of 300mm GaN technology is that existing 300mm silicon manufacturing equipment can be utilized, as gallium nitride and silicon are very similar in manufacturing process. Infineon’s large-scale silicon 300mm production lines are ideal for implementing reliable GaN technology, accelerating implementation and enabling efficient use of capital.