Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that its 650 V CoolGaN™ transistor delivers the highest power density performance in DCDC converters, significantly improving system performance and minimizing system costs.

Infineon announced on the 19th that Vitesco Technologies recently selected Infineon’s GaN to increase the power efficiency of its Gen5+ GaN Air DCDC converter.

Vitesco has developed a next-generation DCDC converter using Infineon’s 650 V CoolGaN™ transistors that sets a new standard in power density (over 96 percent efficiency) and sustainability for power grids, power supplies and OBCs.

DCDC converters are essential in all electric and hybrid vehicles for connecting high-voltage batteries to low-voltage auxiliary circuits.

Low-voltage auxiliary circuits include power headlights, interior lights, wiper and window motors, and fans on the 12V side, and pumps, steering drives, lighting systems, electric heaters, and air conditioning compressors on the 48V side.

DCDC converters are also important for the development of cheaper, more energy-efficient vehicles with increasingly low-voltage capabilities.

According to TechInsights, the global automotive DCDC converter market size is estimated to be USD 4 billion in 2023 and USD 11 billion by 2030.It is expected to grow at a CAGR of 15 percent.

In particular, gallium nitride (GaN) plays an important role in increasing the power density of DCDC converters and onboard chargers (OBCs).

The advantages of GaN-based transistors in high-frequency switching applications are significant, but more important is their high switching speeds, which have been improved from 100 kHz to over 250 kHz.

This can significantly reduce switching losses even in hard-switching half-bridge structures, minimizing heat and overall system losses.

Infineon's CoolGaN transistors feature fast turn-on and turn-off speeds and a top-side-cooled TOLT package. They are air-cooled, eliminating the need for liquid cooling, reducing overall system costs.

The 650 V CoolGaN transistors improve power efficiency and density, and also enable 800 V output. They also feature 50 mΩ on-resistance (RDS(on)), 850 V drain-source transient voltage, 30 A IDS,max, and 60 A IDSmax,pulse.

“We are delighted that industry leaders like Vitesco are using Infineon’s GaN devices to innovate in their applications,” said Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line. “This is where the ultimate value of GaN comes into play, as in this paradigm shift from liquid to air-cooled systems.”

Infineon’s CoolGaN transistor 650 V products are now available. Further information is available at www.infineon.com/gan.