Wide Bandgap Device Testing Challenges and Solutions

Historically, power semiconductors have utilized silicon-based semiconductor technology. However, with the recent emergence of electric vehicles and fifth-generation mobile communications (5G), wide bandgap (WBG) semiconductors that can replace conventional semiconductors are receiving significant attention.
 
Power semiconductors utilizing silicon carbide (SiC) and gallium nitride (GaN) materials are representative examples, characterized by superior electrical properties compared to silicon-based semiconductors. They enable energy transfer and operation across a wider operating range, demonstrating exceptional performance under higher temperatures, higher voltages, and faster switching speeds.

Therefore, in this webinar, we will examine the characteristics of wide bandgap (WBG) devices, and in particular, explore in detail the challenges that arise in GaN device measurement. Based on this foundation, we will discuss how to address GaN device testing challenges using Tektronix's proprietary probing solutions.


 


Webinar Key Topics
- Advantages of WBG devices viewed through the key differences between WBG semiconductors and the most common MOSFETs
- Challenges in GaN device measurement, particularly measurement difficulties in the high-side section
- How to address testing challenges using the Tektronix IsoVu^® probe
- Comparison of GaN device measurement results using conventional high-voltage probes and IsoVu probes