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GaN (Gallium Nitride) Power Semiconductor Research and Development Trends for Electric Vehicles
| e4ds Semiconductor Technology Conference 2021 Spring | ||
|---|---|---|
| Session 1 | An Ki-hyun, Executive Director (Korea Semiconductor Industry Association) |
Recent Issues and Countermeasures in the Semiconductor Industry |
| Session 2 | Lee Hyung-seok, Principal Researcher (Electronics and Telecommunications Research Institute) |
Research and Development Trends in GaN (Gallium Nitride) Power Semiconductors for Electric Vehicles |
| Session 3 | Yeon Kyou-bong, Center Director (Korea Automotive Research Institute) |
Development Trends in Automotive Semiconductor Technology |
Lee Hyung-seok, Principal Researcher at the Electronics and Telecommunications Research Institute, who participated in the conference, presented research and development trends in GaN (gallium nitride) power semiconductors for electric vehicles.
Principal Researcher Lee Hyung-seok stated that to improve the energy efficiency of electric vehicles, it is necessary to enhance the efficiency and miniaturization of power conversion devices through the use of high-efficiency and fast-switching power devices. He outlined the conditions for ideal power semiconductors as follows: △losses should be minimized, △leakage current at high voltages should be small, △switching speed should be fast with low power loss, and △reliability including temperature characteristics should be guaranteed.
He noted that SiC (silicon carbide) and GaN (gallium nitride) materials have recently been commercialized or are undergoing extensive research as power semiconductor materials meeting these conditions. He mentioned that these wide band-gap power semiconductors are receiving attention as next-generation power semiconductors due to their low power consumption and high-efficiency operation.
Notably, when replacing Si devices with GaN devices, conduction losses decrease to 1/1,000, and efficiency improvements of 2–10 percentage points compared to Si devices are observed, with DC-DC efficiency maintained at 95%, AC-DC at 90%, and DA-AC at 99%.
GaN power semiconductors can be used in wireless communications, MEMS, display panel switches, temperature sensors, wireless communications, electric vehicles, aircraft, LED lighting, biomedical applications, DVD storage, and fuel cells.
Subsequently, Principal Researcher Lee Hyung-seok introduced the GaN power semiconductor technology developed by the Electronics and Telecommunications Research Institute. The GaN power semiconductor developed by the research institute demonstrated efficiency of 95.42% at 50W power.
Those who wish to view Principal Researcher Lee Hyung-seok's presentation on 'Research and Development Trends in GaN (Gallium Nitride) Power Semiconductors for Electric Vehicles' again can do so through the video replay.
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