Introduction to WBG Characteristics and Test Solutions for High-Power Measurement

Wide Bandgap (WBG) semiconductors are next-generation semiconductors based on silicon carbide (SiC) and gallium nitride (GaN). WBG semiconductors are significantly smaller, faster, and more efficient than silicon semiconductors. They are characterized by superior electrical properties compared to conventional semiconductors, and enable energy transfer and operation across a wider operating range, demonstrating exceptional performance under higher temperatures, higher voltages, and faster switching speeds.
 
Wide Bandgap device characterization presents new challenges for design, reliability, and test engineers. Attend this session to learn how to avoid errors when characterizing at the wafer level or packaged device level.
 
This session introduces the characteristics of Wide Bandgap (WBG) and device properties, and proposes solutions. We will cover various DC and AC parameter tests for both GaN and SiC-based devices. You will learn how to conduct testing with Keithley equipment and review the resulting data together.



<Webinar Key Topics>
WBG Types and Characteristics: Provides comprehensive information on WBG including what WBG is, future trends, and device characteristics.
WBG Test Parameters: Identifies test parameters measurable with Keithley equipment from SiC and GaN device datasheets.
Test Execution and Solution Proposal: Examines how to conduct testing with Keithley equipment and reviews the resulting data together. Introduces Keithley equipment for testing WBG devices.
4200A and 2600-PCT-4B are the target equipment.