Accurate Simulation Method of SiC MOSFET Switching Waveforms

SiC MOSFET is an excellent device capable of fully demonstrating high-speed switching characteristics even in high-voltage circuits, and its application has been expanding across various circuit implementations.

During high-speed switching operation, various issues such as noise tend to occur easily, requiring careful attention in the design phase. To resolve these design challenges, high-precision simulation is essential.

 

To support customer design efforts, Rohm provides the ROHM Solution Simulator, which enables rapid simulation on the web without requiring separate program installation, as well as various design support tools.




In this webinar, we will focus on the implementation of SiC MOSFET switching waveforms and introduce simulation methods that can resolve design challenges.

This content is suitable for those who are beginning circuit design for the first time, as well as those facing various challenges during the design process.

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