The International Memory Workshop was held in Korea, a country that boasts of being a leader in memory semiconductors. Samsung Electronics heated up the presentation of the latest memory technology by introducing the next-generation memory technology, IGZO-based vertical channel transistor, in its keynote speech.

The 16th IEEE International Memory Workshop (IMW) 2024 was held on the 12th at the Grand Walkerhill Hotel in Seoul.

The four-day IMW 2024 consists of sessions on memory technology in various fields, including NAND flash, DRAM, RRAM, Ferro, and 3D processes.

On the 13th, when the opening session was held, invited speakers from Samsung Electronics, SK Hynix, and Kioxia presented the latest memory issues in the keynote session.

Ha Dae-won, a Samsung Electronics DS Master, has attracted attention by presenting IGZO-based technology as the next-generation DRAM cell structure at the sub-10nm node.

IGZO is a metal oxide material composed of indium (In), gallium (Ga), and zinc oxide (ZnO), and expansion into next-generation DRAMs was being attempted through IGZO-based vertical channel transistors (VCT). The advantages of IGZO material include high electron mobility, low leakage current, high on/off ratio suitable for low power, and suitability for low-temperature processes.

IGZO-based VCTs, which are monolithically stacked on top of core and peripheral transistors without the need for wafer bonding, are known to be suitable for 10nm or less DRAMs due to their low leakage current.

Deposition of IGZO channels can be done by both PVD (physical vapor deposition) and ALD (atomic layer deposition), but ALD is preferred because the thickness and state can be precisely controlled, Master Ha added. ALD equipment is expected to be preferred for DRAMs of 10nm or less due to its excellent step coverage, which allows for a thin film to be deposited with a uniform thickness.

Meanwhile, IMW 2024, held in Korea for the first time in 14 years, was hosted by the Department of Materials Science and Engineering at Seoul National University, and was attended by many global memory companies and related small and medium-sized enterprises, including Applied Materials, Samsung Electronics, SK Hynix, Changshin Memory (CXMT), Kioxia, Tokyo Electron, Micron, and Synopsys.

Applied Materials, which also participated as a premier sponsor, has supported IMW for over 10 years.