Latest EliteSiC M3e MOSFETs Dramatically Improve Energy Efficiency...Up to 50% Reduced Turn-Off Loss
Intelligent Power Product Portfolio·EliteSiC M3e Combined ... Provides Optimized System Solutions

Onsemi has announced plans to introduce a range of next-generation SiC products by 2030, highlighting it as an important step towards accelerating the transition to electrification.

Onsemi announced today the introduction of its latest generation SiC technology platform, the EliteSiC M3e MOSFET, stating that the future of electrification lies in advanced power semiconductors.

As the climate crisis worsens and global energy demand soars, governments and industries are setting ambitious climate goals to reduce environmental impacts and ensure a sustainable future.

At the heart of these efforts is the shift to electrification to reduce carbon emissions and accommodate renewable energy sources.

“Today’s infrastructure cannot keep pace with the global demand for more intelligent and electrified mobility without groundbreaking innovation in the power sector,” said Simon Keeton, president of ON Semiconductor’s Power Solutions Group. “This is a critical enabler for achieving global electrification and combating climate change. ON Semi is accelerating this innovation with plans to significantly increase power density across our SiC technology roadmap through 2030. “This will meet growing energy demands and enable a global electrification transition,” he said.

EliteSiC M3e MOSFETs will play a fundamental role in influencing the effective adoption of electrification initiatives by enabling performance and reliability of next-generation electrical systems at a lower cost per kilowatt (Kw), enabling the transition to more efficient, higher-power data centers to meet the exponentially increasing energy demands that power the engines of sustainable artificial intelligence.

Additionally, the platform’s ability to operate at higher switching frequencies and voltages while minimizing power conversion losses is essential for a wide range of automotive and industrial applications, such as electric vehicle powertrains, DC fast chargers, solar inverters, and energy storage solutions.

EliteSiC M3e MOSFETs feature ON Semi’s unique design engineering and manufacturing capabilities that enable significant reductions in conduction and switching losses in a reliable and field-proven planar architecture.

This can reduce conduction loss by 30% and turn-off loss by up to 50% compared to previous generations.

ON Semi will extend the life of its SiC planar MOFETs and deliver industry-leading performance with its EliteSiC M3e technology, ensuring platform robustness and reliability and making it the preferred choice for critical electrification applications.

Additionally, EliteSiC M3e MOSFETs offer the industry’s lowest specific on-resistance (RSP) and short-circuit capability, making them ideal for traction inverters that dominate SiC volumes.It is very important in the chapter.

Packaged in OnSemi’s state-of-the-art discrete and power modules, the 1200V M3e die delivers significantly more phase current than previous EliteSiC technology, delivering approximately 20% more output power in the same traction inverter housing.

Conversely, it is now possible to design for a given power level using 20% less SiC product, enabling the design of smaller, lighter and more reliable systems while reducing costs.

Onsemi offers a broader portfolio of intelligent power technologies including gate drivers, DC-DC converters and e-fuses for use with the EliteSiC M3e platform.

Onsemi's end-to-end combination of optimized and co-engineered power switches, drivers and controllers enables advanced features through system integration and can also lower overall system cost.

With global energy demand expected to surge over the next decade, the need to increase the power density of semiconductors has become critical.

ON Semiconductor is driving innovation across the SiC roadmap, from die architectures to new packaging technologies, and will continue to address the general industry demand for increased power density.

With each new generation of SiC, cell structures are optimized to efficiently deliver more current in a smaller area, increasing power density.

Here is Onsemi's advanced packaging technology When combined, they can maximize performance and reduce package size. By applying Moore’s Law concepts to SiC development, ON Semi can develop multiple generations simultaneously and accelerate its roadmap to rapidly bring multiple new EliteSiC products to market by 2030.

“With decades of experience in power semiconductors, we are pushing the boundaries of speed and innovation in engineering and manufacturing to meet the growing global energy demand,” said Dr. Mrinal Das, senior director of technology marketing for ON Semiconductor’s Power Solutions Group. “In SiC, there is a significant technological interdependence between materials, devices and packages. Having full ownership of these key aspects allows us to control the design and manufacturing process, allowing us to bring new generations to market much faster.”