Energy efficiency is becoming increasingly important as data centers consume more and more power to support the massive processing demands of AI workloads. Compared to a typical search engine, AI-enabled engines require more than 10 times the power. As a result, global data center power demand is expected to reach approximately 1,000 TWh within two years.

Onsemi announced today the T10 PowerTrench family of products and EliteSiC 650V MOSFETs.

This product creates a solution that provides efficiency and heat dissipation performance in a small installation space for data center applications.

To process a single AI request, energy is converted four times from the grid to the processor, which can result in energy loss of approximately 12%. In data centers, the company explained that power losses can be reduced by approximately 1% using the T10 PowerTrench MOSFET family and the EliteSiC 650V MOSFET solution.

If this were introduced to data centers around the world, it would reduce energy consumption by 10TWh per year, or the amount of energy needed to power about 1 million households per year.

ON Semiconductor is confident that its EliteSiC 650V MOSFETs will enable higher efficiency in data centers and energy storage systems by offering superior switching performance and low device capacitance. Compared to previous generations, the next-generation silicon carbide (SiC) MOSFETs reduce gate charge by half and reduce both output capacitance (Eoss) and energy stored in output charge (Qoss) by 44%.

Additionally, it can significantly reduce switching losses compared to super junction (SJ) MOSFETs because there is no tail current at turn-off and it has excellent performance at high temperatures. This allows customers to increase operating frequency while reducing the size of system components, thereby reducing overall system costs.

Additionally, the T10 PowerTrench MOSFET family is designed to handle the high currents essential for DC-DC power conversion stages. It also provides improved power density and superior thermal performance in a compact footprint.

This is achieved through a shield gate trench design with ultra-low gate charge and sub-1 milliohm on-resistance. In addition, the soft recovery body diode and low reverse recovery charge (Qrr) effectively minimize waveform shaking, overshoot, and electrical noise, helping to secure performance, reliability, and robustness under stress situations.

The T10 PowerTrench MOSFET family meets the standards required for automotive applications. This combination of solutions also meets the stringent ORV3 (Open Rack V3) specifications required by hyper-scale operators to support next-generation high-power processors.

“AI and electrification are reshaping our world and driving skyrocketing demand for electricity,” said Simon Keeton, president of ON Semiconductor’s Power Solutions Group. “Accelerating power semiconductor innovation to improve energy efficiency is key to realizing these technology megatrends.”

“Our latest solution can significantly reduce power losses that occur during energy conversion and have a meaningful impact on demand for next-generation data centers,” he said.