Qorvo®, a global leader in wireless communications and power solutions, has made a groundbreaking advancement in solid-state circuit breaker (SSCB) technology with the introduction of a 4mΩ SiC JFET that delivers superior performance over mechanical circuit breakers with the lowest on-resistance.

Kobo announced on the 15th that it has launched a 750V 4mΩ silicon carbide (SiC) JFET using a compact surface-mount TOLL (TO-leadless) package.

The device is specifically designed for circuit protection applications such as solid-state circuit breakers (SSCBs) where low resistance, excellent thermal performance, small size, and reliability are important.

Kobo's UJ4N075004L8S offers the lowest on-resistance (RDS(on)) of any 650 V to 750 V power device available in a standard discrete package.

Not only does this low on-resistance significantly reduce heat generation, but the compact TOLL package also enables a solution size that is 40% smaller than competing devices.

Cobo’s power devices have an ultra-low on-resistance of 4mΩ, which is 4 to 10 times lower than competing Si MOSFETs, SiC MOSFETs, and GaN transistors.

This enables higher efficiency and reduces power loss. Reduce.

The 750 V rating provides improved design margin of 100 to 150 V higher than other technologies to manage voltage transients.

The TOLL package has a 30% smaller footprint and half the height of the comparable D2PAK package, making it ideal for space-constrained applications such as semiconductor circuit breakers.

Industry-leading 0.1C/W thermal resistance of the junction to case enables effective heat dissipation.

The high side current rating is 120 A DC up to 144°C case temperature, with 588 A pulsed current for 0.5 ms. Therefore, it increases the robustness and resistance to transient overload.

Compared with conventional circuit breakers, Kobo SSCBs offer several advantages, including fault interruption in microseconds, which is much faster than the milliseconds of mechanical circuit breakers, improving system reliability and preventing equipment damage.

Not only that, they do not generate arcs, have no rotating contacts, so they do not wear out and have a longer operating life.

“With the introduction of the UJ4N075004L8S, Qorvo continues to lead innovation in SiC power devices, providing FETs with ultra-low RDS(on) in a very small footprint to enable emerging applications such as circuit protection,” said Ramanan Natarajan, product line marketing director for Qorvo’s SiC Power Products business unit. “The SSCB market is rapidly growing, and Qorvo’s latest offering marks a significant milestone in the evolution of this technology.”

Kobo's JFETs are highly robust devices suited to meet the challenges of circuit protection, capable of turning off extremely high inrush currents during circuit faults. This new JFET from Kobo can withstand high transient junction temperatures without any performance degradation or parameter drift.

Additionally, the 'normally-on' characteristic of this JFET allows for seamless integration into systems where the switch is on by default and turns off when faulted.

This 750 V 4 mΩ SiC JFET in the TOLL package from Kobo represents a significant advancement in semiconductor circuit breaker technology, delivering superior performance, efficiency and design flexibility compared to existing mechanical circuit breakers and other semiconductor solutions.

UJ4N075004L8S is currently sampling and will enter full-scale production in the fourth quarter of 2024.

Additional JFET options are available, including 750 V 5 mΩ and 1,200 V 8 mΩ ratings, all available in a TO-247 package.

More information on this innovative power technology and product specifications can be found in UJ4N075004L8S .