ACM Research, Inc. has received customer process qualification certification for its 300mm semiconductor mass production atomic layer deposition (ALD) furnace equipment, and is set to begin supplying high-quality ultra-thin film deposition equipment and expanding its customer base.

ACM announced today that its Ultra Fn A plasma-enhanced atomic layer deposition (PEALD) furnace equipment has completed process qualification certification for a Chinese semiconductor manufacturing customer.

This equipment is now in mass production.

Additionally, the Ultra Fn A thermal atomic layer deposition (ALD) furnace equipment has also successfully completed process qualification with another major Chinese customer.

Ultra Fn A furnace ALD products support various thin film deposition tasks for both thermal ALD and PEALD types, and can process more than 100 300mm wafers in batches. It includes a loading area oxygen concentration control system, an integrated gas supply system and in-situ dry cleaning capabilities.

The Ultra Fn A PEALD equipment is designed for deposition of ultra-thin silicon nitride (SiN) films, significantly improving within-wafer and wafer-to-wafer uniformity.

The Ultra Fn A thermal ALD equipment is certified for silicon carbon nitride (SiCN) thin film deposition and can precisely control the film thickness at the atomic level.

“Advanced integrated circuit (IC) manufacturing relies heavily on ultra-thin film deposition,” said David Wang, CEO of ACM Research. “Our ALD platform is a revolutionary technology that addresses the complexities of fabricating advanced 3D structures.”