Reduced reverse recovery time upon turn-off after freewheeling
Suitable for electric vehicle charging stations, solar inverters, etc.

STMicroelectronics announced on the 24th that it has released the MDmesh DM6 600V MOSFET equipped with a Fast-Recovery body diode.
This MOSFET provides the performance benefits enabled by ST's latest Super-Junction technology to full-bridge and half-bridge topologies and Zero-Voltage Switching (ZVS) phase-shift converters, as well as to applications and topologies that generally require robust diodes capable of handling dynamic dV/dt.

The MDmesh DM6 MOSFET, utilizing ST’s Carrier-Lifetime control technology, reduced the reverse-recovery time (trr) to minimize power loss of the diode when turning off after freewheeling.

Soft recovery was also optimized to improve stability. By simplifying thermal management and reducing EMI through a capacitance profile suitable for light loads and extremely low gate charge (Qg) and on-resistance (RDS(ON)), it enables higher operating frequencies and efficiency.

This new device is suitable for equipment such as electric vehicle charging stations, power converters in telecoms or data centers, and solar inverters, achieving excellent energy ratings through more robust performance and enhanced power density.

The MDmesh DM6 family of products in the STPOWER portfolio consists of 23 components with current ratings from 15A to 72A, each providing a gate charge (Qg) range of 20nC to 117nC and an RDS(ON) of 0.240Ω to 0.036Ω.

For applications requiring precise current sensing, there is a wide variety of widely used power package options available, such as the new low-inductance lead-free TO-LL, PowerFLAT 8x8 HV, D2PAK, TO-220, and TO-247, featuring short leads, long leads, or Kelvin pins.