SK Hynix Develops 16Gbit DDR4 DRAM
LPDDR5 and HBM3 expand the 1z microprocessor


SK Hynix announced on the 21st that it has developed a 16Gbit (gigabit) DDR4 DRAM using the 3rd generation 10nm-class (1z) fine process.

Compared to the second-generation (1y) product, productivity has improved by approximately 27%, and cost competitiveness has also been increased as production is possible without the ultra-expensive EUV (Extreme Ultraviolet) exposure process.

It reliably supports data transfer speeds up to 3200 Mbps, the maximum speed for DDR4 standards. Power efficiency has also been improved, reducing power consumption by approximately 40% compared to modules of the same capacity made with second-generation 8 Gb products.

DRAM with higher capacitance improves data retention time and consistency. Third-generation products use new materials not used in previous generations' production processes to increase capacitance. It was not disclosed what the new substance was.

New design technology was also introduced to improve operational stability.

Lee Jeong-hoon, head of the 1z TF division of the DRAM development business, said, “The 3rd generation 10nm-class DDR4 DRAM is the product most suited to the changing demands of customers seeking high-performance/high-capacity DRAM,” and added, “We will complete preparations for mass production within the year and begin full-scale supply next year to actively respond to market demand.”

Meanwhile, SK Hynix plans to expand the application of its third-generation 10nm-class fine process technology across various applications, including the next-generation mobile DRAM, LPDDR5, and the fastest DRAM, HBM3.