Used in radar, 5G base stations, satellite communications, etc.

Technology has been developed to localize power components primarily used in military radar and mobile communication base stations.
On the 5th, the Electronics and Telecommunications Research Institute (ETRI) announced that with the development of S-band 200W-class gallium nitride (GaN) power device technology, it is now possible to carry out all processes from device design to processing, measurement, and packaging using domestic technology.

The S-band refers to the 4GHz frequency band, which is widely used in radar equipment and utilized in the civilian sector for 5G mobile communication, Wi-Fi, Bluetooth communication, etc.

Radar equipment is a core technology for detecting long-range targets and requires high power output for precise detection and tracking. While vacuum tubes have primarily been used as power control components in existing equipment, they entail significant costs due to their short lifespan and the need for large auxiliary devices such as generators. Furthermore, when utilizing other materials like silicon or silicon carbide, it is difficult for power devices to generate sufficient output.

Accordingly, gallium nitride power devices characterized by high output, high voltage, and high efficiency are gaining attention as a key material for next-generation semiconductors. Gallium nitride is a compound capable of achieving a power density more than 10 times higher than that of gallium arsenide (GaAs), making it suitable as a high-power amplifier device.

However, since there are not many domestic companies with the relevant technological capabilities and price competitiveness, the military, defense, and civilian industries have been importing all of their equipment from foreign sources. But recently, due to Japan's strong export restrictions on power semiconductors and integrated circuits, there is a need for domestic technological capabilities.

Accordingly, ETRI has focused over the past four years on developing an S-band 200W power device chip with performance comparable to that of global semiconductor companies such as Wolfspeed and Qorvo of the United States, and Sumitomo of Japan. As a result, the research team packaged power device chips measuring 0.78mm x 26mm each and verified their performance.

The technology developed this time is expected to be of great help in the development of radars requiring high system output of 150W or more, and is expected to be utilized in next-generation mobile communication base stations, repeaters, radars for ships and vehicles, and satellite communication.

ETRI plans to continue research aimed at expanding frequency and output power and localizing key civilian and military components, while focusing on the development of power devices and gallium nitride-based integrated circuits, which are among the major items subject to export restrictions.

Kang Dong-min, Head of the RF Power Components Research Lab at ETRI, stated, “We have succeeded in securing high-output gallium nitride power device technology based on excellent domestic facilities and research teams,” adding, “I hope this will help with the localization of core semiconductor components and prevent the encroachment of foreign equipment.”

Meanwhile, this research was conducted as part of the 'Government-led Core Technology Program' organized by the Agency for Defense Development (ADD), and full-scale mass production is scheduled to begin after undergoing a commercialization process at a specialized private company.