This page was machine-translated and may differ from the original. View original
ON Semiconductor Launches 900V and 1200V SiC MOSFETs for High-Performance Applications
Expanding WBG device range with SiC MOSFET family
Includes onboard charging for EVs and UPS/server supply units.
ON Semiconductor has expanded its wide bandgap (WBG) device range with the launch of two families of silicon carbide (SiC) MOSFETs.
This product is designed for demanding, high-growth applications such as solar power inverters, on-board charging for electric vehicles (EVs), uninterruptible power supplies (UPSs), server power supplies, and EV charging stations, delivering performance not possible with silicon (Si) MOSFETs.
▲ ON Semiconductor Launches 1200V and 900V SiC MOSFETs <Image = ON Semiconductor>
The new 1200V and 900V N-channel SiC MOSFETs offer improved switching speed and reliability compared to conventional Si MOSFETs. A high-speed, built-in diode with low reverse recovery charge reduces power loss and increases operating frequency, increasing the power density of the overall solution.
The smaller chip size results in lower device capacitance and gate charge Qg down to about 220nC, which further improves high-frequency operation and reduces switching losses when operating at high frequencies. Compared to Si-based MOSFETs, EMI is further reduced and fewer and smaller passive components can be used.
Compared to Si devices, SiC MOSFETs offer improved surge capability, improved avalanche performance and short-circuit robustness, and ensure high reliability and long life spans essential for demanding modern power applications.
The low forward voltage provides threshold-free on-state characteristics, reducing static losses that occur when the device is conducting.
The 1200V devices are rated for up to 130A (IP max), while the 900V devices are rated for up to 118A. For applications requiring higher currents, ON Semiconductor MOSFETs can be easily operated in parallel due to their positive temperature coefficient and isolation.
ON Semiconductor's WBG MOSFETs deliver significantly better performance than Si devices, offering lower losses, higher operating temperatures, faster switching, improved EMI, and enhanced reliability.
All of ON Semiconductor's SiC MOSFETs are lead-free and halogen-free, and devices for automotive applications are AEC Q100 qualified and PPAP-compliant, while being available in industry-standard TO 247 or D2PAK packages.
Includes onboard charging for EVs and UPS/server supply units.
ON Semiconductor has expanded its wide bandgap (WBG) device range with the launch of two families of silicon carbide (SiC) MOSFETs.
This product is designed for demanding, high-growth applications such as solar power inverters, on-board charging for electric vehicles (EVs), uninterruptible power supplies (UPSs), server power supplies, and EV charging stations, delivering performance not possible with silicon (Si) MOSFETs.

▲ ON Semiconductor Launches 1200V and 900V SiC MOSFETs <Image = ON Semiconductor>
The new 1200V and 900V N-channel SiC MOSFETs offer improved switching speed and reliability compared to conventional Si MOSFETs. A high-speed, built-in diode with low reverse recovery charge reduces power loss and increases operating frequency, increasing the power density of the overall solution.
The smaller chip size results in lower device capacitance and gate charge Qg down to about 220nC, which further improves high-frequency operation and reduces switching losses when operating at high frequencies. Compared to Si-based MOSFETs, EMI is further reduced and fewer and smaller passive components can be used.
Compared to Si devices, SiC MOSFETs offer improved surge capability, improved avalanche performance and short-circuit robustness, and ensure high reliability and long life spans essential for demanding modern power applications.
The low forward voltage provides threshold-free on-state characteristics, reducing static losses that occur when the device is conducting.
The 1200V devices are rated for up to 130A (IP max), while the 900V devices are rated for up to 118A. For applications requiring higher currents, ON Semiconductor MOSFETs can be easily operated in parallel due to their positive temperature coefficient and isolation.
ON Semiconductor's WBG MOSFETs deliver significantly better performance than Si devices, offering lower losses, higher operating temperatures, faster switching, improved EMI, and enhanced reliability.
All of ON Semiconductor's SiC MOSFETs are lead-free and halogen-free, and devices for automotive applications are AEC Q100 qualified and PPAP-compliant, while being available in industry-standard TO 247 or D2PAK packages.
본 기사에 대한 정정·반론·추후보도 청구는 보도 청구 안내를, 그간 게재된 보도문은 정정·반론보도 모아보기를 참고해 주세요.













