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Power Integrations' SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Automotive Qualification
SIC118xKQ SCALE iDriver reduces switching losses and maximizes inverter efficiency
Power Integrations (POWI) has achieved AEC-Q100 automotive qualification for its SIC118xKQ SCALE iDriver, a high-efficiency single-channel gate driver for silicon carbide (SiC) MOSFETs.
▲ Power Integrations' SCALE-iDriver for SiC MOSFETs has achieved AEC-Q100 automotive qualification. <Image = Power Integrations>
The SIC1182KQ (1200 V) and SIC1181KQ (750 V) SCALE-iDriver devices are optimized for driving SiC MOSFETs in automotive applications and provide ▲rail-to-rail output ▲fast gate switching speed ▲unipolar supply voltage supporting positive and negative output voltages ▲integrated power and voltage management ▲reinforced isolation.
It also has safety features such as drain-source voltage (VDS) monitoring, SENSE readout, primary and secondary undervoltage lockout (UVLO), current-limited gate drive, and advanced active clamping (AAC) that enables soft turn-off while ensuring safe operation under fault conditions.
AAC combined with VDS monitoring not only ensures safe turn-off in less than 2μs under short-circuit conditions, but also minimizes gate resistance through gate drive control and AAC functions, reducing switching losses and maximizing inverter efficiency. />
The new single-channel SIC118xKQ gate drivers deliver up to 8 A with a standard gate-emitter voltage of +15 V and a variable negative voltage range of -3 V to -15 V, making them suitable for SiC MOSFETs.
It is available in a compact eSOP package that provides creepage and clearance distances of 9.5 mm or more using materials with the highest CTI level (CTI=600 according to IEC 60112) and has high external magnetic field immunity.
“Silicon carbide MOSFET technology has opened up the possibility of smaller and lighter automotive inverter systems,” said Michael Hornkamp, senior director at Power Integrations. “With the trend toward increasing switching speeds and operating frequencies, our products feature low gate resistance to maintain switching efficiency, while providing fast short-circuit response to quickly protect the system in the event of a fault.”
“The SCALW iDriver sets a new standard in insulation reliability for functional safety,” he continued. “Even if a catastrophic driver failure occurs due to a power device, the SCALE iDriver’s insulation remains intact, ensuring that no part of the chassis carries voltages high enough to be life-threatening.”
Power Integrations (POWI) has achieved AEC-Q100 automotive qualification for its SIC118xKQ SCALE iDriver, a high-efficiency single-channel gate driver for silicon carbide (SiC) MOSFETs.

▲ Power Integrations' SCALE-iDriver for SiC MOSFETs has achieved AEC-Q100 automotive qualification. <Image = Power Integrations>
The SIC1182KQ (1200 V) and SIC1181KQ (750 V) SCALE-iDriver devices are optimized for driving SiC MOSFETs in automotive applications and provide ▲rail-to-rail output ▲fast gate switching speed ▲unipolar supply voltage supporting positive and negative output voltages ▲integrated power and voltage management ▲reinforced isolation.
It also has safety features such as drain-source voltage (VDS) monitoring, SENSE readout, primary and secondary undervoltage lockout (UVLO), current-limited gate drive, and advanced active clamping (AAC) that enables soft turn-off while ensuring safe operation under fault conditions.
AAC combined with VDS monitoring not only ensures safe turn-off in less than 2μs under short-circuit conditions, but also minimizes gate resistance through gate drive control and AAC functions, reducing switching losses and maximizing inverter efficiency. />
The new single-channel SIC118xKQ gate drivers deliver up to 8 A with a standard gate-emitter voltage of +15 V and a variable negative voltage range of -3 V to -15 V, making them suitable for SiC MOSFETs.
It is available in a compact eSOP package that provides creepage and clearance distances of 9.5 mm or more using materials with the highest CTI level (CTI=600 according to IEC 60112) and has high external magnetic field immunity.
“Silicon carbide MOSFET technology has opened up the possibility of smaller and lighter automotive inverter systems,” said Michael Hornkamp, senior director at Power Integrations. “With the trend toward increasing switching speeds and operating frequencies, our products feature low gate resistance to maintain switching efficiency, while providing fast short-circuit response to quickly protect the system in the event of a fault.”
“The SCALW iDriver sets a new standard in insulation reliability for functional safety,” he continued. “Even if a catastrophic driver failure occurs due to a power device, the SCALE iDriver’s insulation remains intact, ensuring that no part of the chassis carries voltages high enough to be life-threatening.”
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