Toshiba Launches Two 80V N-Channel Power MOSFETs
Suitable for industrial equipment power supply switching
Drain source on-resistance 40% lower than the previous generation

Toshiba Electronic Devices and Storage Corporation announced on the 30th that it has released two types of 80V N-channel power MOSFETs.
The TPH2R408QM and TPN19008QM, belonging to the U-MOS XH series, are suitable for power supply switching of industrial equipment used in data centers and communication base stations.

Both products are manufactured using Toshiba's latest generation process, and their drain-source on-resistance is about 40% lower than that of the U-MOS VIII-H series manufactured using the current generation process.

The device structure was optimized to improve the trade-off between drain-source on-resistance and gate charge characteristics. As a result, the R _DS(ON) value of the TPH2R40QM is 2.43 mΩ and the VGS is 10 V. The R _DS(ON) value of the TPN19008QM is 19 mΩ and the VGS is 10 V. The high channel temperature rating is Tch=175℃.

TPH2R408QM, suitable for power supply switching such as high-efficiency AC/DC converters and DC/DC converters, and motor control equipment such as motor drives, features SOP advanced packaging, while TPN19008QM features TSON advanced packaging, and shipments began on the 30th.

A Toshiba official stated that the company plans to expand its product lineup with reduced power loss to lower the power consumption of telecommunications equipment.