eSL10 system with Yellowstone and Simul-6 technology
Bringing forward the launch of high-performance logic and memory semiconductor chips


KLA announced on the 21st its newly developed e-beam patterned-wafer defect inspection system, eSL10™.

The eSL10 is designed to accelerate time-to-market for high-performance logic and memory semiconductor chips, including those manufactured using extreme ultraviolet (EUV) lithography, by detecting and reporting defects that cannot be detected by conventional optical equipment or other electron-beam defect inspection platforms.

Yellowstone™ scanning mode can acquire 10 billion pixels of data per scan, allowing high-speed operation while maintaining high resolution. Therefore, efficient inspection of suspected hot spots or detection of defects in a wide area is possible.

Simul-6™ sensor technology collects surface, topography, material contrast, and deep trench information in a single scan, reducing the time required to identify different defect types in challenging device structures and materials.

Customers can build powerful defect detection and monitoring solutions by combining the eSL10 system, which uses deep learning algorithms, with KLA’s 39xx (5th generation) and 29xx (4th generation) wideband optical wafer defect inspection systems.

“Previous e-beam inspection systems have limited their potential for practical applications by offering either high sensitivity or ultra-high speed,” said Amir Azordegan, general manager of KLA’s e-beam division. “The eSL10 system dramatically increases e-beam inspection capability by utilizing a single, high-current-density electron beam.”

Meanwhile, customers of the eSL10 system can benefit from KLA’s global comprehensive service network.