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Infineon Launches CoolSiC™ MOSFET 750V G1 Family for Automotive and Industrial Solutions
Responding to the efficiency and power density demands of automotive and industrial applications
Achieving high efficiency in hard-switching and soft-switching topologies
Infineon Technologies (hereafter Infineon) is introducing a product line to address the growing demand for higher efficiency and power density in industrial and automotive power applications.
Infineon today announced the launch of its 750 V G1 discrete CoolSiC™ MOSFET family, consisting of industrial and automotive grade SiC MOSFETs optimized for totem-pole PFC, T-type, LLC/CLLC, DAB (dual active bridge), HERIC, buck/boost and PSFB (phase-shifted full bridge) topologies.
These MOSFETs are suitable for industrial applications such as electric vehicle charging, industrial drives, solar and energy storage systems, solid-state circuit breakers, UPS systems, servers/data centers, and telecom, as well as automotive applications such as onboard chargers (OBCs) and DC-DC converters.
CoolSiC MOSFET 750V G1 technology features excellent RDS(on) x Qfr and RDS(on) x Qoss figure of merit (FOM), achieving very high efficiency in hard-switching and soft-switching topologies, respectively.
The unique combination of high threshold voltage (VGS(th), 4.3 V typical) and low QGD/QGS ratio provides robustness against parasitic turn-on. It increases the gate voltage and enables unipolar gate driving.
This leads to higher power density and lower cost of the system.
All devices utilize Infineon's proprietary die-attach technology to provide excellent thermal impedance with the same die size.
Infineon's quality standards combined with a highly reliable gate oxide design provide robust, long-term performance.
The CoolSiC MOSFET 750V G1 family meets a wide range of needs with a portfolio that offers RDS(on) from 8 mΩ to 140 mΩ at 25°C, while the design reduces conduction and switching losses to improve overall system efficiency.
The innovative package minimizes thermal resistance, improves heat dissipation, and optimizes power loop inductance within the circuit, enabling high power density and lower system cost.
This family is available in an advanced QDPAK top-side cooling package.
CoolSiC MOSFET 750V G1 is available in QDPAK TSC, D2PAK-7L, and TO-247-4 packages for automotive applications, and QDPAK TSC and TO-247-4 for industrial applications.
Infineon today announced the launch of its 750 V G1 discrete CoolSiC™ MOSFET family, consisting of industrial and automotive grade SiC MOSFETs optimized for totem-pole PFC, T-type, LLC/CLLC, DAB (dual active bridge), HERIC, buck/boost and PSFB (phase-shifted full bridge) topologies.
These MOSFETs are suitable for industrial applications such as electric vehicle charging, industrial drives, solar and energy storage systems, solid-state circuit breakers, UPS systems, servers/data centers, and telecom, as well as automotive applications such as onboard chargers (OBCs) and DC-DC converters.
CoolSiC MOSFET 750V G1 technology features excellent RDS(on) x Qfr and RDS(on) x Qoss figure of merit (FOM), achieving very high efficiency in hard-switching and soft-switching topologies, respectively.
The unique combination of high threshold voltage (VGS(th), 4.3 V typical) and low QGD/QGS ratio provides robustness against parasitic turn-on. It increases the gate voltage and enables unipolar gate driving.
This leads to higher power density and lower cost of the system.
All devices utilize Infineon's proprietary die-attach technology to provide excellent thermal impedance with the same die size.
Infineon's quality standards combined with a highly reliable gate oxide design provide robust, long-term performance.
The CoolSiC MOSFET 750V G1 family meets a wide range of needs with a portfolio that offers RDS(on) from 8 mΩ to 140 mΩ at 25°C, while the design reduces conduction and switching losses to improve overall system efficiency.
The innovative package minimizes thermal resistance, improves heat dissipation, and optimizes power loop inductance within the circuit, enabling high power density and lower system cost.
This family is available in an advanced QDPAK top-side cooling package.
CoolSiC MOSFET 750V G1 is available in QDPAK TSC, D2PAK-7L, and TO-247-4 packages for automotive applications, and QDPAK TSC and TO-247-4 for industrial applications.
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