Combining PowerFLAT 8x8 HV packaging technology

ST has unveiled its latest MDmesh™ DM2 N-channel power MOSFET transistor. This product can further improve the efficiency of low-power power supplies for computers, communication networks, industrial, and consumer devices.

Globally, the scale of collecting, storing, and sharing digital data such as e-books, videos, photos, and music files is rapidly increasing.

Accordingly, there is an increasing need to minimize energy consumption in communication networks where data is ultimately used, as well as in large-scale server farms hosting the cloud and providing a medium of connection for all people and things.

ST is addressing these challenges through the world's best power density solutions that combine state-of-the-art power transistor architecture with PowerFLAT 8x8 HV packaging technology, which offers small size, cost efficiency, and excellent thermal efficiency.

ST's new power transistor family features Fast-Recovery diodes and consists of various Super-Junction power MOSFETs with breakdown voltages up to 650V. It is highly competitive, possessing all the technical characteristics such as low gate charge, input capacitance and resistance, high-speed recovery phase intrinsic diode, very low recovery charge (Qrr) and recovery time (Trr), and industry-leading soft-switching performance[2].