Texas Instruments Incorporated (TI) announced that it is providing engineering samples of a 600V gallium nitride (GaN) 70mΩ field-effect transistor (FET) power stage.

With this, TI has officially become a semiconductor manufacturer offering GaN solutions with integrated high-voltage drivers. The new 12A LMG3410 power stage device enables superior designs compared to using existing silicon FET-based solutions by combining TI's analog and digital power conversion controllers. It provides advantages when designing isolated high-voltage power applications such as industrial, telecommunications, enterprise computing, and renewable energy.

Steve Lambouses, Vice President of TI’s High Voltage Power Solutions business unit, stated, “The LMG3410, having undergone over 3 million hours of reliability testing, can instill confidence in power designers regarding the reliability of GaN and will lay the groundwork for previously unimaginable power architectures and system designs.” He added, “Leveraging TI’s renowned manufacturing capabilities and accumulated expertise in power system design, this new power stage solution represents a significant advancement in the GaN market.”



The LMG3410 provides reliable performance in hard-switching applications by significantly reducing switching losses by up to 80% through the implementation of features such as an integrated driver and zero reverse recovery current. Unlike standalone GaN FETs, the easy-to-use LMG3410 is a functional device with built-in protection features such as temperature, current, and UVLO (Under Voltage Lock Out).