Useful for soft-switching topologies in smartphone and tablet chargers and similar applications
Reduced manufacturing costs through improved assembly process yield

Infineon Technologies announced the launch of a new 700V CoolMOS™ P7 product family to meet the demands of quasi-resonant flyback topology.

Infineon states that the CoolMOS™ P7 MOSFET delivers improved performance compared to superjunction technology currently in use and is useful for soft-switching topologies such as smartphone and tablet chargers and notebook adapters. The company also noted that CoolMOS products are suitable for use in high-speed switching and high power density designs such as TV adapters, lighting, audio, and auxiliary power supplies.



▲700V CoolMOS™ P7

The CoolMOS™ P7 MOSFET achieves efficiency up to 3.9% higher and reduces component temperature by up to 16K in flyback-based charger applications. Compared to the previous 650V C6 technology, it achieves 2.4% improved efficiency and 12K lower component temperature.

The integrated diode enhances ESD robustness to HBM Class 2 level. Assembly process yield improvement reduces manufacturing defects and lowers manufacturing costs. The 700V CoolMOS P7 also exhibits low losses with extremely low RDS(on)*Qg and RDS(on)*EOSS. Compared to the C6 product, the 700V CoolMOS P7 provides an additional 50V blocking voltage.

These products are designed with a focus on ease of use, applying a VGSth of 3V and a tolerance of ±0.5 V, facilitating design work and enabling the use of lower gate-source voltage. The 700V CoolMOS P7 product family is offered in RDS(on) ranges from 360mΩ to 1400mΩ and package combinations including IPAK SL, DPAK, and TO-220FP.