Size and Complexity Reduced Through 500V MOSFET Application
Available in Zig-Zag Lead Option and Line-Lead Package

STMicroelectronics (ST) has launched a new package product for Intelligent Power Modules (IPM), its SLLIMM™ Nano Series.

ST states that this package product incorporates the latest 500V MOSFET, reducing overall size and complexity while adding functionality and improving efficiency.

The new IPM with rated currents of 1A and 2A is suitable for applications up to 100 watts maximum. Such applications include refrigerator compressors, motors for dishwashers and washing machines, drain and recirculation pumps, fans, and drives operating below 20kHz in hard-switching circuits. With an extended operating range up to 150°C, it can be applied even in harsh environments.




These modules integrate one 3-phase MOSFET bridge and a gate-driver HVIC, and are equipped with a dedicated OP amplifier and comparator for overcurrent protection and current sensing functions. Safety features include Interlocking to prevent Shoot-Through current from MOSFET damage in the bridge, fault status output, shutdown input, and smart shutdown functionality. An optional integrated thermistor provides overheating protection.

This series is available not only in the Zig-Zag lead option but also in a Line-Lead package. This simplifies board layout in mechatronic assemblies and other space-constrained applications, and minimizes controller size. Additionally, the combination of superior thermal performance and the excellent efficiency of ST's latest 500V MOSFET expands flexibility in minimizing heatsink size or developing heatsink-free solutions for low-power applications. With low MOSFET on-resistance of 3.6Ω and 1.7Ω for the 2A and 1A products respectively and low switching loss, overall high power efficiency can be maintained.

Through a separate open-emitter connection from the module pins, the MOSFET easily enables 3-shunt current sensing for FOC (Field-Oriented Control) or single-shunt sensing for Trapezoidal Control. Furthermore, this module integrates a bootstrap diode required to control the high-side MOSFET gate, minimizing the use of external components.