Western Digital to Test Produce 512Gb 64-Layer 3D NAND
Published2017.02.22 12:04Mass production is scheduled to begin in earnest in the second half of 2017.
Western Digital announced the test production of its 512Gb 64-layer 3D NAND chip, also known as 'BiCS3'.
Western Digital has adopted next-generation 64-layer vertical stacked 3D NAND technology for BiCS3 with a storage structure of 3 bits per cell (X3). Test production is being conducted at the Yokkaichi plant in Japan, and mass production is scheduled to begin in earnest in the second half of 2017.
This 512Gb 64-layer 3D NAND chip was developed jointly with Western Digital's technology and manufacturing partner, Toshiba. Western Digital unveiled the world's first 64-layer 3D NAND technology in July 2016 and also introduced the world's first 48-layer 3D NAND technology in 2015. Products featuring both technologies are available to retailers and OEM customers.
Siva Sivaram, Senior Vice President of Memory Technology at Western Digital, stated, "The industry's first 512Gb 64-layer 3D NAND chip is a significant achievement in the advancement of 3D NAND technology, doubling its density compared to the 64-layer architecture Western Digital unveiled for the first time in the world last July." He added, "Based on its 3D NAND technology portfolio, Western Digital will actively respond to market changes driven by rapid data growth centered on mobile and data centers, as well as general customers."
관련뉴스
Samsung Electronics expands consumer NVMe SSD market equipped with 3rd generation V-NAND
Samsung Electronics has unveiled the '960 PRO' with third-generation (48-layer) V-NAND, significantly enhancing performance and expanding into the consumer NVMe SSD market. NVMe (Non-Volatile Memory express) is a protocol designed to improve the performance and design flexibility of servers and PCs equipped with PCIe interface-based SSDs, making it suitable for ultra-high-speed, large-capacity data processing. The newly introduced M.2 form factor '960 PRO' 2TB offers four times the capacity and 1.4 times the speed compared to the existing '950 PRO' 512GB, significantly improving user convenience.
2016.09.21by 신윤오 기자
Semiconductor equipment sales rise due to investments in 3D NAND, advanced foundry, and advanced packaging
According to the November BB ratio report released by SEMI, the Semiconductor Equipment and Materials International, the North American semiconductor equipment manufacturers' net bookings for November 2016 (three-month average) reached $1.55 billion, with a BB ratio of 0.96. The BB ratio is calculated by dividing bookings by billings, and a BB ratio of 0.96 means that bookings are $96 for every $100 in billings.
2016.12.23by 김수지 기자
The dilemma of the Chinese semiconductor industry, heated by 3D NAND and foundry investments, is
The semiconductor market appears poised to continue its growth this year, centered on 3D NAND and foundry investments. Given that China accounts for one-third of the global semiconductor equipment investment market, what are the challenges facing China? At a press conference held ahead of SEMICON 2017, which took place from the 8th to 10th of last week, Clark Tseng, an analyst at SEMI (Semiconductor Equipment and Materials International), stated that "the issue is not about money, but rather the challenge of recruiting skilled professional engineers from Taiwan and South Korea, as well as regulatory obstacles in acquiring foreign companies."
2017.02.13by 신윤오 기자
Intel Unveils Next-Generation 'Core Ultra Series 3' and vPro Platform for Enterprise PCs
Intel has officially unveiled the "Intel Core Ultra Series 3" for next-generation enterprise PCs and the latest vPro platform, addressing a wide range of demands from enterprise notebooks to high-performance workstations.
2026.03.26by 배종인 기자
ROHM Launches ESD Protection Diode Compatible with High-Speed Interfaces of 10Gbps or Higher
반도체 전문 기업 로옴(ROHM)이 10Gbps를 넘어서는 차세대 고속 데이터 통신 환경에 대응할 수 있는 ESD(정전기 방전) 보호 다이오드 ‘RESDxVx 시리즈’를 개발하며, 고속 인터페이스에서 요구되는 신호 품질 유지와 IC 보호 성능을 동시에 끌어올렸다.
2026.03.26by 배종인 기자
