MOSFET that increases ECU power density
Maintaining thermal efficiency and footprint, improving heat dissipation

STMicroelectronics (hereinafter ST) has released new MOSFETs STLD200N4F6AG and STLD125N4F6AG based on the 5x6 Dual-Side Cooling (DSC) package PowerFLAT™ that increases power density in automotive Electronic Control Units (ECUs).

This new MOSFET has been adopted by Denso, a leading company that supplies advanced automotive technology to all major automakers.

STLD200N4F6AG and STLD125N4F6AG are 40V devices for automotive motor control applications, reverse-battery protection, and high-performance power switching. The 0.8mm high PowerFlat 5x6 DSC improves heat dissipation by exposing the top source electrode while maintaining the thermal efficiency and footprint of the bottom-face design of standard packages.

In addition, the maximum drain current is 120A and it has maximum on-resistances of 1.5mΩ and 3.0mΩ, respectively, ensuring high energy efficiency and simplifying system thermal management. In addition, efficient switching is possible even at high operating frequencies through low device capacitance and total gate charges of 172nC and 91nC.

These two types of 40V MOSFETs are the first devices in a new family utilizing ST’s STripFET™ F6 series with a trench-gate structure, providing a wide range of current and voltage ratings for automotive applications.