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ADI Launches High-Speed High-Side MOSFET Capable of Operating Up to 150V

Google 우선 소스Published2017.06.08 15:12
Maintains the N-channel MOSFET switch in the ON state using an internal charge pump

Analog Devices announced the release of the LTC7000/-1, a high-speed high-side N-channel MOSFET driver capable of operating up to a supply voltage of 150V.

The internal charge pump of this product enables the external N-channel MOSFET switch to be fully driven and kept in an always-on state. The powerful 1Ω gate driver of the LTC7000/-1 can drive MOSFETs with high gate capacitance within a short switching time, making it ideal for high-frequency switching and static switch applications.

The LTC7000/-1 operates at a bias voltage of 3.5V to 15V and an input supply voltage of 3.5V to 135V, 150VPK. This product detects overcurrent conditions by monitoring the voltage with an external sense resistor connected in series with the drain of an external MOSFET.

The LTC7000/-1 receives a ground-referenced low-voltage digital input signal to rapidly drive a high-side N-channel power MOSFET, with the MOSFET's drain voltage allowed up to 150V relative to GND. Since the rise and fall speeds are very fast at 13ns, switching losses can be reduced when driving a 1,000pF load.
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