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Provides 750 W CW for 915 MHz applications
NXP has launched the MRF13750H transistor for 915MHz applications. It delivers 750 continuous waves (CW), 60% higher than competing products. Based on 50V silicon LDMOS, the product extends the limits of solid-state RF generation, making it a suitable alternative to vacuum tubes for high-power industrial systems.
The MRF13750H transistor offers superior precision, control, and reliability compared to vacuum tube-era technologies such as magnetrons, providing microwave generator designers with ease of use. It also supports precise power control within a total power range of 0 to 750W and enables frequency shifting for accurate RF energy utilization. It minimizes performance degradation over time and offers excellent reductions in total cost of ownership by allowing for decades of operation. To ensure higher stability than magnetrons, the operating power is set to 50V. Another feature is that it enables design redundancy and flexibility as a compact solid-state power amplifier.

“While it is well known that solid-state transistors excel in reliability and control capabilities, industrial system designers have struggled to match the power levels of magnetrons with various transistors. The MRF13750H transistor provides a level of performance usable by industrial heating engineers within significant high-power systems,” explained Pierre Piel, Senior Director and General Manager of Multimarket RF Power at NXP.
“Given the numerous advantages of solid-state RF energy as a highly efficient and controllable heat and power source, the market opportunities to improve existing RF energy applications and create new technologies are limitless. The capabilities of the newly unveiled MRF13750H transistor will further accelerate the industry’s transition to solid-state RF technology,” said Klaus Werner, Executive Director of the RF Energy Alliance (RFEA).
The MRF13750H transistor is designed for industrial, scientific, and medical applications in the 700–1,300 MHz range and is specialized for heating/drying, curing, material welding, and particle accelerators. It provides 750W CW at 915 MHz with 67% efficiency in a compact 7.6×9.7 cm pallet.
NXP has launched the MRF13750H transistor for 915MHz applications. It delivers 750 continuous waves (CW), 60% higher than competing products. Based on 50V silicon LDMOS, the product extends the limits of solid-state RF generation, making it a suitable alternative to vacuum tubes for high-power industrial systems.
The MRF13750H transistor offers superior precision, control, and reliability compared to vacuum tube-era technologies such as magnetrons, providing microwave generator designers with ease of use. It also supports precise power control within a total power range of 0 to 750W and enables frequency shifting for accurate RF energy utilization. It minimizes performance degradation over time and offers excellent reductions in total cost of ownership by allowing for decades of operation. To ensure higher stability than magnetrons, the operating power is set to 50V. Another feature is that it enables design redundancy and flexibility as a compact solid-state power amplifier.
MRF13750H 915 MHz Reference Circuit
“While it is well known that solid-state transistors excel in reliability and control capabilities, industrial system designers have struggled to match the power levels of magnetrons with various transistors. The MRF13750H transistor provides a level of performance usable by industrial heating engineers within significant high-power systems,” explained Pierre Piel, Senior Director and General Manager of Multimarket RF Power at NXP.
“Given the numerous advantages of solid-state RF energy as a highly efficient and controllable heat and power source, the market opportunities to improve existing RF energy applications and create new technologies are limitless. The capabilities of the newly unveiled MRF13750H transistor will further accelerate the industry’s transition to solid-state RF technology,” said Klaus Werner, Executive Director of the RF Energy Alliance (RFEA).
The MRF13750H transistor is designed for industrial, scientific, and medical applications in the 700–1,300 MHz range and is specialized for heating/drying, curing, material welding, and particle accelerators. It provides 750W CW at 915 MHz with 67% efficiency in a compact 7.6×9.7 cm pallet.
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