Unveiled 650V Silicon Carbide Schottky Diode with Easy Device Parallelization
Suitable for demanding environments using SiC technology that utilizes wide bandgap characteristics

ON Semiconductor has expanded its SiC diode product portfolio by unveiling a new family of 650V silicon carbide (SiC) Schottky diodes. The silicon carbide technology incorporated into these diodes provides switching capabilities with low power loss and easy parallelization between devices.

ON Semiconductor’s newly released 650V SiC diode family includes surface-mount and through-hole packages capable of achieving outputs from 6A to 50A. This diode family offers zero reverse recovery charge, low forward voltage, stable current unaffected by temperature, high surge capacitance, and a static temperature coefficient.



The new diode product family is aimed at engineers designing PFC and boost converters required for applications such as solar inverters, chargers for electric and hybrid vehicles, and power supplies for telecommunications and data centers.

The new 650V SiC Schottky diode family also offers various advantages as a system combining high efficiency, power density, a smaller footprint, and enhanced reliability. Power loss can be mitigated because it provides an intrinsic forward voltage without reverse recovery charge. Furthermore, the rapid recovery capability of SiC diodes enables high switching speeds. This allows for smaller overall circuit designs while increasing power density by reducing the size of magnetic and other passive components. In addition, SiC diodes provide higher resistance to surge currents and offer stability over an operating temperature range of -55℃ to 175℃.

ON Semiconductor's SiC Schottky diodes feature a patented, unique termination structure that enhances reliability and improves stability and robustness. They boast high avalanche energy delivery, industry-leading unclamped inductive load switching capabilities, and the lowest leakage current.

Simon Keaton, Senior Vice President and General Manager of ON Semiconductor’s MOSFET Business Unit, said, “ON Semiconductor’s new 650V SiC diode family provides customers with a wide range of options alongside our existing 1200V SiC products. SiC technology, which leverages the unique properties of wide bandgap materials, offers reliable solutions for applications in demanding environments with a structure that is robust compared to silicon. Customers can design with miniaturization and simplified performance.”