This page was machine-translated and may differ from the original. View original
600V/3.5A Single-Phase MOSFET Bridge,
Gate Driver and Bootstrap Diode,
Protection Functions and Two Comparators Integrated in One Package.jpg)
STMicroelectronics PWD5F60
STMicroelectronics has launched the PWD5F60, a high-density power driver and the second product in its power driver SiP series for high-voltage brushed DC and single-phase brushless motor applications.
This SiP solution integrates a 600V/3.5A single-phase MOSFET bridge, gate driver, bootstrap diode, protection functions, and two comparators in a 15 x 7mm package. With excellent thermal efficiency, this SiP occupies 60% less board space compared to discrete components while improving reliability and simplifying design and assembly.
The PWD5F60, a single-phase full-bridge module, is suitable for driving brushed DC motors in applications such as industrial pumps and fans, blowers, consumer appliances, and factory automation systems. It is particularly well-suited for devices using single-phase brushless motors that require excellent durability and efficiency at a reasonable cost. It can also be conveniently used in power supplies in a cost-effective manner.
The integrated N-channel MOSFET in the PWD5F60, implementing 1.38Ω on-resistance, can handle medium-power loads with high efficiency. The gate driver is optimized for stable switching and low EMI, while the integrated bootstrap diode enables high-voltage start-up without requiring external diodes and passive components to supply the high-side input.
Additionally, with two embedded floating comparators, flexibility is assured, making it easy to implement peak current control or overcurrent and overtemperature protection functions. Peak current control used with positioning Hall-Effect sensors can operate as a standalone controller without a dedicated MCU, significantly reducing the cost of control electronics.
Furthermore, flexibility is enhanced by offering adjustable dead time and the option to configure the MOSFETs as a single full-bridge or two half-bridges. The operating voltage range has been extended from 10V to 20V, and the input is compatible with 3.3~15V control signals, allowing interface with Hall sensors or host microcontrollers or DSPs.
Cross-conduction prevention and UVLO (Under-Voltage Lockout) functions are also built in to protect the device by preventing low-efficiency operation and operation under hazardous conditions.
The PWD5F60 is currently in production and supply in a Multi-Island VFQFPN package, with device pricing starting at $2.15 for orders of 1,000 units. The device will be exhibited at the ST booth (Hall C3/101) at electronica 2018, the 2018 Munich Electronics Fair held at Messe Munchen from the 13th to 16th.
Gate Driver and Bootstrap Diode,
Protection Functions and Two Comparators Integrated in One Package
.jpg)
STMicroelectronics PWD5F60
STMicroelectronics has launched the PWD5F60, a high-density power driver and the second product in its power driver SiP series for high-voltage brushed DC and single-phase brushless motor applications.
This SiP solution integrates a 600V/3.5A single-phase MOSFET bridge, gate driver, bootstrap diode, protection functions, and two comparators in a 15 x 7mm package. With excellent thermal efficiency, this SiP occupies 60% less board space compared to discrete components while improving reliability and simplifying design and assembly.
The PWD5F60, a single-phase full-bridge module, is suitable for driving brushed DC motors in applications such as industrial pumps and fans, blowers, consumer appliances, and factory automation systems. It is particularly well-suited for devices using single-phase brushless motors that require excellent durability and efficiency at a reasonable cost. It can also be conveniently used in power supplies in a cost-effective manner.
The integrated N-channel MOSFET in the PWD5F60, implementing 1.38Ω on-resistance, can handle medium-power loads with high efficiency. The gate driver is optimized for stable switching and low EMI, while the integrated bootstrap diode enables high-voltage start-up without requiring external diodes and passive components to supply the high-side input.
Additionally, with two embedded floating comparators, flexibility is assured, making it easy to implement peak current control or overcurrent and overtemperature protection functions. Peak current control used with positioning Hall-Effect sensors can operate as a standalone controller without a dedicated MCU, significantly reducing the cost of control electronics.
Furthermore, flexibility is enhanced by offering adjustable dead time and the option to configure the MOSFETs as a single full-bridge or two half-bridges. The operating voltage range has been extended from 10V to 20V, and the input is compatible with 3.3~15V control signals, allowing interface with Hall sensors or host microcontrollers or DSPs.
Cross-conduction prevention and UVLO (Under-Voltage Lockout) functions are also built in to protect the device by preventing low-efficiency operation and operation under hazardous conditions.
The PWD5F60 is currently in production and supply in a Multi-Island VFQFPN package, with device pricing starting at $2.15 for orders of 1,000 units. The device will be exhibited at the ST booth (Hall C3/101) at electronica 2018, the 2018 Munich Electronics Fair held at Messe Munchen from the 13th to 16th.
To request a correction, reply or follow-up report on this article, see how to file a request. Previously published statements are collected in corrections & replies.
이수민 Reporter














