ROHM SiC adopted as a replacement for IGBTs in 1700V products.
Withstands 1000 hours of insulation breakdown in HV-H3TRB
New module incorporates ROHM's SiC MOSFETs and SBDs

Recently, SiC has been actively adopted for 1200V products in automotive and industrial equipment due to its low-power characteristics. However, IGBTs have generally been used for 1700V products due to reliability issues.

In response to this situation, ROHM released the 1700V rated full SiC power module 'BSM250D17P2E004' on the 7th, which maintains low power characteristics and enhances reliability.
ROHM's new power module successfully suppresses leakage current by preventing insulation breakdown by introducing a new coating material and new manufacturing method. The BSM250D17P2E004 demonstrates no insulation breakdown even after exceeding 1,000 hours in high-temperature, high-humidity bias tests (High Voltage, High Humidity, High Temperature Reverse Bias, HV-H3TRB). Therefore, it can safely handle high voltage of 1700V even in high temperature and high humidity environments.
The new module also incorporates ROHM's SiC MOSFETs and SiC Schottky barrier diodes, achieving 10% better ON-resistance performance than competing products. This also contributes to lower power consumption in applications.

In the future, Loom plans to expand its product lineup so that customers can use it with confidence.