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Support for high-density motor application requirements
A perfect match with KC-LINK surface mount capacitors
Mouser Electronics supplies Texas Instruments (TI)'s 600V, 70mΩ, gallium nitride (GaN) power stage LMG3410R070. 
TI LMG3410R070 Gate Driver
The LMG3410R070, featuring ultra-low input and output capacitance, supports the requirements of high-density motor applications such as industrial and consumer power supplies. With high-performance GaN power stages, it supports higher current, temperature, voltage, and switching frequency than silicon transistors, and reduces switching losses by up to 80%.
TI’s LMG3410R070 GaN power stage supplied by Mouser Electronics has an integrated gate driver and provides improved performance compared to silicon MOSFETs and IGBTs based on excellent protection performance. The device has a common source inductance of zero (0), a user-adjustable slew rate of 25 to 100 V/ns, and a propagation delay time of 20 ns when operating at MHz.
With a slew rate tolerance of 150V/ns or more, it provides overcurrent protection, overtemperature protection, transient overvoltage tolerance, as well as functions such as overvoltage cutoff protection on all supply rails. The LMG3410R070 power stage, produced in a small, 8 × 8mm QFN package, does not require external protective components, allowing for a simplified design and layout.
The LMG3410R070 is suitable for use with the KC-LINK surface-mount capacitors produced by KEMET. Designed to meet the demands of high-speed switching semiconductors, such as TI’s LMG3410R070 IC, the KC-LINK capacitors feature ultra-low effective series resistance and thermal resistance performance, enabling them to withstand the stress of high-frequency, high-voltage DC link applications.
Thanks to the excellent power density provided by TI's LMG3410R070 power stage, efficient topologies such as totem-pole PFC can be utilized, and the size of power devices is reduced by up to 50%. The LMG3410R070 IC is a suitable device for applications such as multi-level converters, solar inverters, high-voltage battery chargers, and UPS (uninterruptible power supply).
How to maximize GaN power solutions by using the LMG3410R070 GaN power stage together with KEMET's KC-LINK capacitors can be found at eng.info.mouser.com/kemet-ti-gan-solutions .
More information about TI's LMG3410R070 power stage can be found at www.mouser.com/ti-lmg3410r070-gan-power-stage .
A perfect match with KC-LINK surface mount capacitors
Mouser Electronics supplies Texas Instruments (TI)'s 600V, 70mΩ, gallium nitride (GaN) power stage LMG3410R070.

TI LMG3410R070 Gate Driver
The LMG3410R070, featuring ultra-low input and output capacitance, supports the requirements of high-density motor applications such as industrial and consumer power supplies. With high-performance GaN power stages, it supports higher current, temperature, voltage, and switching frequency than silicon transistors, and reduces switching losses by up to 80%.
TI’s LMG3410R070 GaN power stage supplied by Mouser Electronics has an integrated gate driver and provides improved performance compared to silicon MOSFETs and IGBTs based on excellent protection performance. The device has a common source inductance of zero (0), a user-adjustable slew rate of 25 to 100 V/ns, and a propagation delay time of 20 ns when operating at MHz.
With a slew rate tolerance of 150V/ns or more, it provides overcurrent protection, overtemperature protection, transient overvoltage tolerance, as well as functions such as overvoltage cutoff protection on all supply rails. The LMG3410R070 power stage, produced in a small, 8 × 8mm QFN package, does not require external protective components, allowing for a simplified design and layout.
The LMG3410R070 is suitable for use with the KC-LINK surface-mount capacitors produced by KEMET. Designed to meet the demands of high-speed switching semiconductors, such as TI’s LMG3410R070 IC, the KC-LINK capacitors feature ultra-low effective series resistance and thermal resistance performance, enabling them to withstand the stress of high-frequency, high-voltage DC link applications.
Thanks to the excellent power density provided by TI's LMG3410R070 power stage, efficient topologies such as totem-pole PFC can be utilized, and the size of power devices is reduced by up to 50%. The LMG3410R070 IC is a suitable device for applications such as multi-level converters, solar inverters, high-voltage battery chargers, and UPS (uninterruptible power supply).
How to maximize GaN power solutions by using the LMG3410R070 GaN power stage together with KEMET's KC-LINK capacitors can be found at eng.info.mouser.com/kemet-ti-gan-solutions .
More information about TI's LMG3410R070 power stage can be found at www.mouser.com/ti-lmg3410r070-gan-power-stage .
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