ROHM Co., Ltd. has begun mass production of automotive GaN devices, making a full-scale foray into the automotive GaN device market.


ROHM recently announced that it has started mass production of the 'GNP2070TD-Z', a TOLL (TO-LeadLess) packaged product of a 650V GaN HEMT.

The TOLL package is a compact package with excellent heat dissipation characteristics as well as excellent current capacity and switching characteristics, and is being adopted in applications that require high power response, including industrial and automotive equipment.

For the manufacturing of this package, we entrusted it to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter, ATX), which has a wealth of experience as a semiconductor post-processing company (OSAT).

The new product is equipped with a second-generation GaN on Si Chip in a TOLL package, and has achieved industry-leading figures for device performance indicators (RDS(ON) × Qoss), which indicate the relationship between ON resistance and input capacitance.

Accordingly, it contributes to the next-level miniaturization and power saving of power systems that require high voltage and high-speed switching.

Mass production from December 2024 (sample price 3,000 yen/unit, tax excluded)) and Internet sales have begun, and can be purchased from online parts distribution sites such as CoreStaff Online™ and Chip 1 Stop™.

In mass production of new products, ROHM carried out design and planning by utilizing the device design technology and know-how accumulated through its integrated production system as its base.

And as part of the collaboration with TSMC announced on December 10, 2024, the front-end process is produced by TSMC and the back-end process is produced by ATX.

We also plan to collaborate with ATX on the production of GaN devices for automotive applications.

The adoption of GaN devices in the automotive sector is expected to accelerate from 2026.

In addition to its own development, ROHM plans to strengthen collaborative activities to achieve rapid market introduction of automotive GaN devices.