Infineon Technologies (Korea CEO Seung-Soo Lee) is shipping its first product based on 200mm silicon carbide (SiC) wafers, contributing to reducing CO2 emissions through the development of energy-efficient solutions in electric vehicles, renewable energy, and AI data centers.

Infineon has made significant progress on its 200mm silicon carbide (SiC) roadmap, with the first products based on advanced 200mm SiC technology expected to be available to customers in the first quarter of 2025.

Manufactured in Villach, Austria, it offers the best SiC power technology for high-voltage applications such as renewable energy, trains and electric vehicles.

Additionally, Infineon’s manufacturing facility in Kulim, Malaysia, is making smooth progress transitioning from 150mm wafers to larger, more efficient 200mm wafers.

SiC semiconductors have revolutionized high-power applications by converting electricity more efficiently, providing high reliability and robustness under extreme conditions, and enabling smaller designs.

Infineon's SiC products enable customers to develop energy-efficient solutions for electric vehicles, fast charging stations, trains, as well as renewable energy systems and AI data centers.

Infineon focuses on offering a comprehensive portfolio of high-performance power semiconductors that contribute to the transition to green energy and the reduction of CO2. />
Infineon’s production sites in Villach and Kulim, the ‘Infineon One Virtual Fab’ for highly innovative wide bandgap (WBG) technologies, share technologies and processes that enable fast ramp-up and smooth, efficient operation in SiC and gallium nitride (GaN) manufacturing.

The 200mm SiC manufacturing activities further strengthen Infineon’s technology leadership across the entire spectrum of power semiconductors, including silicon, SiC and GaN, leading the way in power system solutions.