In the field of motor drive systems, efficiency, reliability, and miniaturization are becoming important trends, and SiC (silicon carbide) MOSFETs are gradually replacing existing Si (silicon)-based MOSFETs and emerging as a key technology.

According to the semiconductor industry, as industrial applications and transportation systems are becoming increasingly electrified, SiC products with improved efficiency and thermal performance, which are important requirements for these applications, are gaining popularity.

SiC MOSFETs are used in a wide range of applications, including industrial motor drives, power sectors for electric and hybrid vehicles, electric vehicle inverters, and industrial power converters.

According to Global Market Insights, the global SiC MOSFET market is expected to grow from approximately $2 billion in 2023 to approximately $21.5 billion by 2032, at a compound annual growth rate (CAGR) of 30.1%.

Dual-modular SiC MOSFETs account for a significant portion of the overall market, and their usage is growing rapidly, especially in high-power applications.

Regionally, the Asia Pacific region accounts for approximately 60% of the total SiC MOSFET market, with demand growth particularly notable in Korea, China, and Japan.

SiC MOSFET An important reason in motor drives is that SiC MOSFETs have very low on-resistance (Rds(on)) and fast switching characteristics compared to Si MOSFETs, which significantly reduces power loss (switching loss + conduction loss). This directly leads to improved efficiency and reduced power consumption, especially in motor drives.

It also provides very fast switching speeds, enabling high-frequency operation. High switching frequencies enable smooth motor control, reduced noise and vibration, and reduced system size and weight.

In addition, there is little performance degradation even at high temperatures. Typically, the maximum junction temperature is 175 to 200°C, which allows for a simpler heat dissipation design due to the high heat resistance, thus reducing the overall size and cost of the motor drive system.

It exhibits excellent performance in high-voltage systems (600 V to 1,700 V or higher) and is particularly suitable for applications where high-voltage operation is essential, such as electric vehicles and industrial motor inverters.

Additionally, SiC MOSFETs indirectly support improved performance of power factor correction (PFC) circuits in motor drive systems due to their fast switching speed and high efficiency.

This can help reduce the size of the system and increase cost efficiency.

On the other hand, general Si MOSFETs have relatively high conduction and switching losses, which leads to reduced efficiency and increased heat generation, and their switching speed is slow and switching losses are large, which is disadvantageous for high-frequency operation, lowering the precision and efficiency of motor control.

Typically, the maximum junction temperature is 125–150°C, and when this temperature is exceeded, performance drops sharply, requiring a large heat sink or cooling system, increasing system size and cost.

In addition, general Si MOSFETs show limitations in efficiency and switching performance in high-voltage applications, so IGBTs have traditionally been used primarily in high-voltage applications above 600 V. In recent years, SiC MOSFETs are rapidly replacing these IGBTs.

Major global SiC MOSFET manufacturers include Wolfspeed, Infineon Technologies, ROHM Semiconductor, STMicroelectronics, and onsemi.


Wolfspeed is a leader in SiC power semiconductors, offering products in a wide range of voltages from 650 V to 3,300 V.

With high power density, low on-resistance, and fast switching speed, it is widely used in electric vehicles, industrial inverters, and renewable energy fields. It has a vertically integrated production system from SiC wafers to devices, so it has excellent quality control and supply stability.

Infineon Technologies is famous for its 'CoolSiC™' series, which has a wide range of products from 650V to 2000V.

It is suitable for industrial drives, electric vehicle chargers, solar inverters, etc. with excellent thermal management performance and high reliability, and its design is optimized for high-voltage applications, providing high efficiency and high reliability.

ROHM Semiconductor has developed a 4th generation SiC MOSFET with a trench structure that achieves low on-resistance and high switching performance.

It provides high efficiency and reliability in electric vehicle powertrains, industrial power converters, etc., and through collaboration with Hitachi Astemo, it is possible to develop electric vehicle inverters.We provide solutions optimized for the terrain.

STMicroelectronics offers 650V, 1200V, and 1700V products under the 'STPOWER' series, suitable for electric vehicles and industrial applications.

It maximizes system efficiency with high switching frequency and low loss characteristics, and provides stable operation and excellent thermal management performance in high-voltage systems.

Onsemi offers high-speed switching and high thermal stability with its 'EliteSiC™' series.

It ensures high efficiency and reliability in electric vehicle chargers, solar inverters, and industrial power systems, and is designed for stable operation even in high-temperature environments and has low switching loss.

Microchip Technology offers 1200V and 3300V products under its 'mSiC™' series, suitable for high-voltage applications.

Excellent gate oxide stability and high short-circuit resistance ensure high reliability in industrial systems, and long-term oxide life and high durability extend the life of the system.

The global SiC MOSFET market is growing steadily, with rapid adoption especially in industrial motor drives and electric vehicles. Based on high efficiency and reliability, SiC MOSFETs are expected to play an increasingly central role in future motor drive systems.

Future innovations in motor drive systems will be centered around SiC MOSFETs, making the gradual phase-out and technological transition of existing Si-based systems inevitable.