July 9, 2012, Seoul — Infineon Technologies (Korea Representative Director Seung-soo Lee) has launched a family of high-power transistors suitable for pulsed applications in commercial aircraft, radar systems, and other industrial amplifiers. Utilizing 50V LDMOS process technology, these products provide high power density, support compact and efficient system designs, and offer industry-leading robustness.

As the first products in the PTVA product family, products with paired driver and output transistor configurations are provided to offer 400W and 500W output power for use in L-band and UHF-band radar systems, as well as a 1000W device for commercial aviation frequency band applications from 965 to 1215 MHz. These products can withstand a Voltage Standing Wave Ratio (VSWR) of at least 10:1 as a criterion for evaluating robustness, which is twice as high as that of competing devices.

“These new products will meet the high efficiency and cost-effectiveness requirements of new system designs, based on Infineon’s accumulated quality standards and advanced RF power technology. Furthermore, by adopting 50V LDMOS technology, aircraft and radar system designers will be able to achieve power output targets required for compact, lightweight, and highly reliable system designs,” said Gerhard Wolf, Executive Vice President and General Manager of RF Power at Infineon Technologies.

The PTVA product family offers excellent robustness, enabling improved system performance in noisy signal environments. Furthermore, by reducing circuit design complexity compared to competitor devices, it can lower overall system costs and enhance system reliability. In addition, the low thermal resistance of 0.20°C/watt not only improves thermal management but also allows for the use of a small heat sink, thereby saving costs while further improving reliability.

The key performance features of the PTVA product released for use in three operating frequency bands are as follows:
• 390~450 MHz: The PTVA035002EV provides 500W Pout with 17.5dB gain and 65% efficiency. As a paired driver product, the PTVA030121EA provides 14W Pout with 22dB gain and 73% efficiency.
• 1200~1400 MHz: The PTVA123501EC provides 400W Pout with 13dB gain and 52% efficiency. As a paired driver product, the PTVA120251EA provides 38W Pout with 14.5dB gain and 58% efficiency.
• 965~1215 MHz: The PTVA101K02EV provides 1100W Pout with 15.5dB gain and 60% efficiency.

All of these products comply with RoHS regulations and are available in open cavity ceramic packages.

supply
We are currently supplying samples of radar frequency band PTVA transistors. UHF band device products are currently in mass production, and L band device products are scheduled to begin mass production this summer. Sample supply for aviation frequency band products will begin this quarter, with mass production scheduled for the fourth quarter of this year.

Further details regarding the new PTVA 50V power LDMOS product family can be found at www.infineon.com/rfpower .