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Mouser Supplies Infineon CoolGaN HEMT to Promote High-Speed Switching in Semiconductor Power Supply
| Promoting high-speed switching operations of semiconductor power supplies
Suitable for hard switching and soft switching topologies
| Output and gate charge 1/10 that of silicon transistors
Mouser Electronics announced on the 20th that it is supplying Infineon Technologies' CoolGaN GaN (gallium nitride) HEMT (High Electron Mobility Transistor). 
Infineon Technologies CoolGaN GaN HEMT
CoolGaN HEMTs, featuring high efficiency and power density, facilitate high-speed switching operations in semiconductor power devices.
CoolGaN HEMTs, suitable for hard-switching and soft-switching topologies, are ideal devices for applications such as wireless charging, SMPS (Switching Mode Power Supply), telecommunications, hyperscale data centers, and servers.
The new product offers superior performance compared to silicon-based switching devices. For example, the output charge and gate charge are 10 times lower than those of silicon transistors, the dielectric breakdown field is 10 times higher, and the mobility is 2 times higher.
CoolGaN HEMT, optimized for turn-on and turn-off, provides a high-level switching solution based on a new topology and current modulation technology. Thanks to HEMT's surface-mount packaging technology, full switching performance is available, and its compact design allows it to be used in applications with limited installation space.
Infineon's CoolGaN gallium nitride HEMT is supported by the EVAL_1EDF_G1_HB_GAN and EVAL_2500W_PFC_G evaluation platforms.
The EVAL_1EDF_G1_HB_GAN board is equipped with CoolGaN 600V HEMT and Infineon's GaN EiceDRIVER gate driver IC, so it can evaluate high-frequency GaN performance in general-purpose half-bridge topologies used in converter and inverter applications.
The EVAL_2500W_PFC_G board is equipped with CoolGaN 600V e-mode HEMTs, CoolMOS C7 gold superjunction MOSFETs, and EiceDRIVER gate driver ICs. Thanks to this, it provides a 2.5kW full-bridge PFC (power factor correction) evaluation tool that promotes system efficiency to over 99% in energy-critical applications such as SMPS and telecommunications rectifiers.
Suitable for hard switching and soft switching topologies
| Output and gate charge 1/10 that of silicon transistors
Mouser Electronics announced on the 20th that it is supplying Infineon Technologies' CoolGaN GaN (gallium nitride) HEMT (High Electron Mobility Transistor).

Infineon Technologies CoolGaN GaN HEMT
CoolGaN HEMTs, featuring high efficiency and power density, facilitate high-speed switching operations in semiconductor power devices.
CoolGaN HEMTs, suitable for hard-switching and soft-switching topologies, are ideal devices for applications such as wireless charging, SMPS (Switching Mode Power Supply), telecommunications, hyperscale data centers, and servers.
The new product offers superior performance compared to silicon-based switching devices. For example, the output charge and gate charge are 10 times lower than those of silicon transistors, the dielectric breakdown field is 10 times higher, and the mobility is 2 times higher.
CoolGaN HEMT, optimized for turn-on and turn-off, provides a high-level switching solution based on a new topology and current modulation technology. Thanks to HEMT's surface-mount packaging technology, full switching performance is available, and its compact design allows it to be used in applications with limited installation space.
Infineon's CoolGaN gallium nitride HEMT is supported by the EVAL_1EDF_G1_HB_GAN and EVAL_2500W_PFC_G evaluation platforms.
The EVAL_1EDF_G1_HB_GAN board is equipped with CoolGaN 600V HEMT and Infineon's GaN EiceDRIVER gate driver IC, so it can evaluate high-frequency GaN performance in general-purpose half-bridge topologies used in converter and inverter applications.
The EVAL_2500W_PFC_G board is equipped with CoolGaN 600V e-mode HEMTs, CoolMOS C7 gold superjunction MOSFETs, and EiceDRIVER gate driver ICs. Thanks to this, it provides a 2.5kW full-bridge PFC (power factor correction) evaluation tool that promotes system efficiency to over 99% in energy-critical applications such as SMPS and telecommunications rectifiers.
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