Supply of 5th-generation V-NAND-based eUFS 3.0 begins
| 2x faster sequential read speed than eUFS 2.1
| 5th generation 512Gb V-NAND stacked in 8 layers

Samsung Electronics announced on the 27th that it has begun mass production of the next-generation mobile memory '512GB eUFS 3.0 (embedded Universal Flash Storage 3.0)', taking the lead in the next-generation flagship smartphone memory market.
eUFS 3.0 products achieve a sequential read speed of 2100MB/s, which is more than twice as fast as the existing eUFS 2.1.

This is about 4 times faster than SATA SSD and 20 times faster than microSD card, and when transferring data stored on a mobile device to a PC (based on eUFS 3.0 → NVMe SSD), one Full HD movie (3.7 GB) can be transferred in less than 3 seconds.

Samsung Electronics explained that this product, which has NVMe SSD-level performance, will allow consumers to experience ultra-slim notebook-level performance even in next-generation mobile devices with ultra-high resolution.

Samsung Electronics achieved this performance by stacking 5th generation 512Gb V-NAND in eight layers and installing a high-performance controller in this product.
> In addition, the sequential write speed was increased by more than 1.5 times compared to the existing eUFS 2.1 product at 410MB/s, and the random read/write speed was also implemented at up to 63000·68000 IOPS (Input/Output Operations Per Second), which is up to 1.3 times faster.

In particular, the random read/write speed is more than 630 times improved compared to the microSD card (100 IOPS), enabling fast and smooth processing of various complex tasks simultaneously on a large, ultra-high-resolution display.

“By starting mass production of eUFS 3.0 products, consumers can now experience the convenience and satisfaction of high-end laptops on their mobile devices,” said Choi Cheol, Vice President of Strategic Marketing at Samsung Electronics’ Memory Business Division. “By expanding our lineup to 1TB this year, we will contribute to helping global mobile manufacturers leap into new growth areas in the premium market.”

Samsung Electronics plans to begin supplying 512GB and 128GB eUFS 3.0 products in February, followed by 1TB and 256GB capacities in the second half of the year, expanding the range of choices for global IT customers and actively supporting the timely launch of next-generation mobile devices.

Samsung Electronics created the UFS market in 2015 by mass-producing mobile embedded memory 'eUFS 2.0', which is 1.4 times faster than the existing 'eMMC (embedded MultiMediaCard)', and opened the era of eUFS 3.0 this year, following eUFS 2.1 in 2017.