Mouser supplies TI LMG1210 drivers
| Operates with 200V increase mode GaN FET
| Provides 10ns ultra-low propagation latency

Mouser Electronics announced on the 20th that it supplies Texas Instruments (TI)'s LMG1210 200V half-bridge MOSFET and GaN FET driver.

The LMG1210, part of TI's GaN (gallium nitride) power portfolio, offers advantages such as higher efficiency, improved power density, and reduced overall system size compared to existing silicon-based devices, and is manufactured optimized for power conversion applications where speed is essential.

The LMG1210 is a 50MHz half-bridge driver designed to operate with GaN FETs in a maximum 200V increase mode.

It is developed for maximum performance and high-efficiency operation and provides an ultra-low propagation delay of 10ns, so it operates faster than conventional silicon half-bridge drivers.

In addition, it features a low switch node capacitance of 1pF and a user-adjustable dead time control function. Therefore, dead time can be optimized when designing the system.

The LMG1210 features a high-side to low-side delay matching time of 3.4ns, a minimum pulse width of 4ns, and an internal LDO device, providing a 5V gate drive voltage regardless of the supply voltage.

In addition, it achieves high system noise immunity with a Common Mode Transient Immunity (CMTI) of 300 V/ns or more.

The LMG1210 can be used in various fields, such as high-speed DC/DC converters, motor control, Class-D audio amplifiers, Class-E wireless charging, RF envelope tracking, and other power conversion applications.