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ROHM Launches SiC MOSFET in TO-247-4L Package

Google 우선 소스Published2019.09.19 11:45
| SCT3xxx xR, Trench gate structure adopted
| 35% loss ↓ with TO-247-4L compared to TO-247N
| Evaluation board P02SCT3040KR-EVK-001 provided



As AI and IoT spread across all industries, demand for cloud services and data centers continues to grow. For servers used in data centers, as capacity and performance are promoted, the question of how much power consumption can be reduced is emerging as an issue.
Comparison of SiC MOSFET switching losses (Image = ROHM)

Until now, silicon (Si) devices have been the mainstream in power conversion circuits in servers, but silicon carbide (SiC) devices with lower loss are attracting attention.

SiC MOSFETs using the TO-247-4L package are expected to be used in high-power applications such as servers, base stations, and solar power generation because they can reduce switching loss compared to existing packages.
ROHM launches 6 types of SCT3xxx xR series
(Image = Rohm)

ROHM has released six models of the 'SCT3xxx xR series', 650/1200V withstand voltage SiC MOSFETs with a trench gate structure suitable for high-efficiency server power supplies, solar inverters, and electric vehicle charging stations.

The SCT3xxx xR series adopts a 4-terminal package (TO-247-4L).all.
Comparison of TO-247N and TO-247-4L packages
(Image = Rohm)

The existing TO-247N package had a low gate voltage due to the inductance component of the source terminal, which delayed the switching speed.

On the other hand, TO-247-4L can separate the power source terminal and driver source terminal, which can suppress the influence of inductance component.
Comparison of losses between TO-247N and TO-247-4L
(Image = Rohm)

In particular, loss at turn-on has been improved. Including turn-on loss and turn-off loss, loss can be reduced by approximately 35% compared to existing products.
ROHM P02SCT3040KR-EVK-001 Evaluation Board
(Image = Rohm)

ROHM also released the SiC MOSFET evaluation board 'P02SCT3040KR-EVK-001' equipped with its gate driver IC (BM6101FV-C) suitable for driving SiC devices, as well as various power ICs and discrete products.

In order to provide an evaluation environment under the same conditions, not only TO-247-4L package products but also TO-247N products can be mounted. Through the evaluation board, developers can perform double pulse tests, boost circuits, two-level inverters, and synchronous rectification type buck circuits.
ROHM, SCT3xxx xR series lineup (Table = ROHM)

Meanwhile, the SCT3xxx xR series began sequential mass production in August with a monthly production capacity of 500,000 units.
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2 Comments:

  1. 임강혁

    좋은 정보 감사합니다

  2. 정강식

    좋은정보 감사합니다