Built-in bootstrap diode for increased latch-up resistance
Provides fast reverse recovery characteristics at 36Ω rated on-resistance
Improved reliability for -100V repetitive 300ns pulses

Infineon Technologies has released a 650V half-bridge SOI (silicon on insulator) driver with built-in bootstrap diodes.
The newly introduced product enhances negative transient voltage immunity while improving latch-up immunity by integrating a bootstrap diode in a monolithic manner.

This enables developers to create robust and reliable designs for MOSFET and IGBT-based inverter applications while reducing BOM costs. The high-output 2ED218x products are suitable for high-frequency applications such as induction ranges, air conditioner compressors, SMPS, and UPS, while the low-output 2ED210x products are suitable for home appliances, power tools, motor control and drives, fans, and pumps.

2ED218x is a high-current EiceDRIVER product with a current of 2.5A, and 2ED210x is a low-current EiceDRIVER product with a current of 0.7A. We provide products with various configurations, including shutdown functions, individual logic, and power grounding.

The built-in bootstrap diode exhibits fast reverse recovery characteristics at a rated on-resistance of 36Ω, and negative transient immunity to repetitive 300ns pulses of -100V ensures reliable operation.

The dead time function using the interlock function and the independent gate low voltage lockout (UVLO) function for the upper and lower power supplies provide safe operation.

In addition, the 2ED218x and 2ED210x are compatible with the previous generation IR(S)218x and IR(S)210x products and are available in industry-standard DSO-8 (SOIC8) and DSO-14 (SOIC-14) packages. As 2kV HBM ESD rated products, the gate drivers have a propagation delay of 200ns.