Infineon Launches CoolSiC MOSFET 650V Family with Enhanced Energy Efficiency and Power Density
Published2020.03.05 10:51Provides excellent high-frequency switching efficiency and thermal performance
In response to the growing demand for improved energy efficiency and power density, Infineon Technologies is adding a 650V product to its silicon carbide (SiC) product portfolio.
The newly released CoolSic MOSFET is suitable for applications such as servers, telecommunications, industrial SMPS, solar energy systems, energy storage and battery formation, UPS, motor drives, and EV charging.
▲ CoolSiC MOSFET 650V product family <Image = Infineon Technologies>
With on-resistance (RDS(ON)) ratings ranging from 27 mΩ to 107 mΩ, this product is available in standard TO 247 3-pin as well as TO 247 4-pin packages, further reducing switching losses.
Like the previously released CoolSic MOSFET products, this 650V product also adopts Infineon's latest trench semiconductor technology. By maximizing the outstanding physical properties of SiC, it features high reliability and best-in-class switching and conduction losses.
In addition, it features the highest transconductance level (amplification factor), 4V threshold voltage (Vth), and short-circuit robustness, and trench technology minimizes application losses while achieving maximum reliability during operation.
The 650V CoolSic MOSFET provides high-frequency switching efficiency and excellent reliability compared to other silicon or silicon carbide solutions on the market, as well as excellent thermal performance due to its very low dependence on temperature for on-state resistance (RDS(ON)).
It incorporates a robust and stable body diode to maintain a very low reverse recovery charge (QRR), which is approximately 80% lower than the best superjunction CoolSic MOSFET. It also offers excellent rectification robustness, allowing for the easy achievement of 98% overall system efficiency using continuous conduction mode totem-pole PFC.
Infineon provides 1-channel and 2-channel electrically isolated EiceDRIVER gate driver ICs to enable easy application design and maximum performance using CoolSic MOSFET 650V products.
With a solution combining CoolSiC switches and dedicated gate driver ICs, developers can lower system costs and total cost of ownership while increasing energy efficiency. CoolSiC MOSFETs also work seamlessly with other ICs in the Infineon EiceDRIVER gate driver family.
"By adding the CoolSic 650V product, Infineon has completed its portfolio of silicon, silicon carbide, and gallium nitride-based power semiconductors in the 600V and 650V power ranges," said Stefan Metzger, Senior Director of Infineon's Power Management business unit.
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