Improvement in conductivity performance, thermal resistance, and pulse current capacity
Increased efficiency in low-frequency switching applications

Infineon Technologies has launched the 600V CoolMOS S7 product, which increases power density and energy efficiency in applications where MOSFETs are switched at low frequencies.
The CoolMOS S7 product family features optimized conduction performance, enhanced thermal resistance, and high pulse current capacity. Target applications include active bridge rectifiers, inverter stages, PLCs, power solid-state relays, and solid-state circuit breakers, and the 10mΩ CoolMOS S7 MOSFET is the industry's lowest RDS(on) product.

In addition, it is designed to minimize conduction losses and ensure fast response times in low-frequency switching applications, while increasing efficiency.

The CoolMOS S7 device offers lower RDS(on)xA compared to the CoolMOS 7 product, which not only reduces switching losses with low on-resistance and price but also provides the industry's lowest on-resistance (R _DS(on) ) as a high-voltage switch.

Here, a 10mΩ chip is mounted in an innovative top-cooled QDPAK, and a 22mΩ chip is mounted in the latest TOLL (TO lead-led) SMD package, enabling a cost-effective, simple, and high-efficiency design. The system meets relevant regulations and energy efficiency certifications, enabling a reduction in power consumption, number of components, heat sinks, and total cost of ownership (TCO).

The 22mΩ 600V CoolMOS S7 device is available in TOLL and TO 220 packages, the 40mΩ and 65mΩ devices are available in TOLL packages, and the 10mΩ CoolMOS S7 MOSFET will be available starting in the fourth quarter.