Samsung Electronics Mass-produces eUFS 3.1, Twice as Fast as SATA SSD
Published2020.03.17 11:01Storage speed of 1,200MB/s, twice that of SATA SSD
Pyeongtaek Yangsan expansion, new 2nd line in Xi'an in operation
Samsung Electronics announced on the 17th that it will mass produce '512GB (gigabyte) eUFS 3.1 (embedded Universal Flash Storage 3.1),' a memory for smartphones.
The 512GB eUFS 3.1 has significantly expanded its sequential write speed. At 1,200MB/s, it is approximately three times faster than the existing 512GB eUFS 3.0 (410MB/s). It is also more than twice as fast as the data processing speed of a PC equipped with a SATA SSD (540MB/s) and more than 10 times faster than the speed of a UHS-I microSD card (90MB/s).
The sequential read speed is 2,100MB/s, which is equivalent to existing eUFS 3.0 products. The random read and random write speeds are 100,000 IOPS (Input/Output operations per second) and 70,000 IOPS, respectively, which is slightly improved by 1.6 times and 1.03 times compared to eUFS 3.0 products at 63,000 IOPS and 68,000 IOPS.
Samsung Electronics plans to dominate the flagship smartphone memory market this year with its 'eUFS 3.1' product line consisting of three capacities: 512GB, 256GB, and 128GB.
Meanwhile, Samsung Electronics has converted the 5th generation V-NAND currently being produced at the P1 line of its Pyeongtaek Campus to the 6th generation V-NAND. In addition, it has also started mass production of the 5th generation V-NAND at its new Line 2 (X2) in Xi'an, China, where its first product shipment ceremony was recently held.
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Samsung Electronics begins mass production of 512GB eUFS 3.0, promising mobile devices faster than laptops.
Samsung Electronics has begun mass production of 512GB eUFS 3.0, the next-generation mobile memory, securing a leading position in the premium smartphone memory market. The eUFS 3.0 product achieves sequential read speeds of 2100MB/s, more than twice faster than the existing eUFS 2.1. Samsung Electronics explained that through this product, which features NVMe SSD-level performance, consumers can experience ultra-slim notebook-level performance even on next-generation mobile devices with ultra-high resolution.
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