With a 3.3V PWM input signal
Maximum ±70V static zero potential and above
Can withstand instantaneous ±150Vpeak zero potential or higher


Whenever the power MOSFET in the SMPS is turned on and off, parasitic inductance causes a potential above zero, which can incorrectly trigger the gate driver IC.

To prevent such problems, Infineon Technologies announced on the 9th that it is launching the EiceDRIVER 1EDN Truely Differential Inputs (TDI) 1-channel gate driver.

The 1EDN7550U can withstand static zero potential up to ±70V and instantaneous zero potential up to ±150Vpeak with a 3.3V PWM input signal at the application level. Two of them can also be configured to form a 48V half-bridge.

The new product is available in a 1.5mm × 1.1mm × 0.39mm 6-pin leadless TSNP package. TSNP packages are five times smaller than SOT-23 products, taking up less PCB area.

Users can operate 25V and 40V OptiMOS MOSFETs in a switched-capacitor topology at a switching frequency of 1.2MHz with the leadless TSNP package EiceDRIVER 1EDN7550U. Additionally, in these applications, a power density of 3060W/ ^in³ and a peak efficiency of 97.1% (including auxiliary losses) can be achieved.