Reduce ON resistance without reducing short-circuit withstand time
ON resistance decreased by 40% compared to the 3rd generation, switching loss decreased by 54%


As demand for powertrains and high-capacity batteries increases in the electric vehicle sector, silicon carbide (SiC) power semiconductors with high withstand voltage and low loss are attracting attention.

On the 17th, ROHM announced that it has developed a '1200V 4th generation SiC MOSFET' that reduces ON resistance without reducing short-circuit withstand time.

In power semiconductors, reducing ON resistance shortens the short-circuit withstand time—the time it takes for a short circuit to fail. Therefore, SiC MOSFETs, which have lower ON resistance than conventional Si MOSFETs, require longer short-circuit withstand times.

ROHM's newly developed 4th-generation product further enhances its double-trench structure, reducing ON resistance per unit area by approximately 40% compared to 3rd-generation products without reducing short-circuit withstand time. Furthermore, parasitic capacitance is significantly reduced, reducing switching loss by approximately 50% compared to 3rd-generation products.

The fourth-generation product began offering bare-chip samples sequentially in June. Samples will be available in discrete packages in the future.