Infineon's 5th generation thinQ! SiC Schottky barrier diode delivers market-leading efficiency
Published2012.10.31 13:48October 31, 2012, Seoul - Infineon Technologies (Korea CEO Lee Seung-soo) has expanded its SiC (Silicon Carbide) portfolio by launching the 5th generation 650V thinQ!™ SiC Schottky Barrier Diode.
By combining Infineon's proprietary diffusion soldering process with a new, more compact design and the latest thin-film wafer technology, the product delivers a 30% lower FOM (Figure of Merit, Qc x Vf) compared to previous Infineon SiC diode products and improved thermal characteristics. As a result, the product series delivers improved efficiency in PFC and boost stages under all load conditions compared to all previous thinQ!™ generations. The 5th generation products are optimized for high-end server and telecom SMPS (Switched-Mode Power Supply), PC silver-box and lighting applications, solar inverters, UPS (Uninterruptible Power Supply) systems, and more. Using the latest generation products provides benefits including improved efficiency, reduced EMI (Electromagnetic Interference), increased system reliability, and cost savings and size reduction through reduced cooling requirements.
Jan-Willem Reynaerts, business division manager for High Voltage Power Conversion Products at Infineon Technologies, stated, "Since Infineon first launched SiC Schottky diodes in 2001, we have significantly improved and expanded our portfolio. Differentiated SiC diodes are building the future of green energy." He added, "The 5th generation products offer significantly improved system efficiency and power density compared to the previous generation at an attractive price-to-performance ratio."
By combining 2nd generation forward voltage (Vf) levels with 3rd generation's low junction charge (Qc) values, the 5th generation product can deliver the highest efficiency levels in PFC circuits. The new product family offers a higher breakdown voltage level of 650V, matching recently announced levels in CoolMOS™ technology, compared to the 600V of 2nd and 3rd generation products. This feature provides higher safety margins in solar inverters and demanding SMPS environments. Additionally, the 5th generation products offer high robustness against surge current, higher current ratings, and a more diverse portfolio through new packages such as TO-247 and ThinPAK.
Availability
Samples are currently available.
Detailed information on Infineon's new 5th generation 650V thinQ!™ SiC Schottky barrier diode is available at: www.infineon.com/sic-gen5
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