November 6, 2012, Seoul - Infineon Technologies (Korea CEO Lee Seung-soo) has added 1200V and 1350V devices with 30A and 40A ratings to its third-generation Reverse Conducting soft-switching IGBT (Insulated Gate Bipolar Transistor) product family. This enables the company to meet increasingly stringent reliability requirements.

Infineon has established a strong position in resonant switching IGBT technology suitable for induction cooking applications. The third-generation IGBT devices are optimized to achieve low switching losses and conduction losses, delivering industry-leading efficiency at 1100V, 1200V, and 1350V.

These new products provide more than 20 percent lower switching losses, demonstrating a 5K case temperature reduction compared to Infineon's second-generation reverse conducting IGBT in application testing. Lower switching losses reduce thermal stress on the device, thereby extending lifetime and achieving higher reliability. Characterized by high efficiency from soft switching operation, excellent thermal performance, and superior EMI performance, these products are the most suitable IGBT devices on the market for induction cooking, photovoltaic, and other resonant switching applications.

The addition of 30A and 40A, 1350V products to the existing 30A and 40A, 1200V lineup meets the requirements of designers needing higher voltage and current ratings, and enables designs up to 3.6kW in single-ended topology.

Furthermore, the 30A and 40A, 1350V devices feature increased SOA (safe operation area) and improved overcurrent ratings under surge conditions, enabling designers to develop more robust and highly reliable product designs.

Roland Stele, Marketing Director of Infineon Technologies' IGBT Power Discrete division, stated, "The third-generation products are designed to meet increasingly stringent demands for application-specific power switches, offering the best price-to-performance ratio suited for the target application and meeting application-specific requirements. These third-generation reverse conducting IGBT products have established new industry standards in enhanced system efficiency, reliability, and power density. The superior system performance derives from the device's improved ruggedness."

Designers can select from current ratings of 15/20/30/40A and voltage ratings of 1200V/1350V to choose an IGBT that offers characteristics and superior efficiency tailored to their applications. By combining high design flexibility with excellent performance, design work can be simplified and development time shortened.

All third-generation reverse conducting IGBT products are designed to operate at junction temperatures up to 175°C. The saturation voltage VCE(sat) is 1.80V and 2.10V for the 15A/1200V and 40A/1350V devices respectively at Tj=175°C. Low turn-off switching losses enable highly efficient operation. At dv/dt=150.0V/s and Tj=175°C, this loss is 0.15mJ for the 15A/1200V IGBT and 1.07mJ for the 40A/1350V device.

Availability
The third-generation reverse conducting IGBT product family includes 1200V and 1350V products in 15A, 20A, 30A, and 40A current ratings, and a 1100V product in 30A current rating. These devices are currently in volume production. Further details are available at www.infineon.com/rch3.