Useful for reducing power consumption and system downsizing
High voltage resistance, high-speed switching, low on-resistance


Toshiba announced on the 20th that it has launched the 1200V silicon carbide (SiC) MOSFET 'TW070J120B' and began shipping on the 19th.

This product is suitable for industrial applications, including large-capacity power supplies. Compared to conventional silicon (Si) MOSFETs or IGBTs, it offers high voltage resistance, high-speed switching, and low on-resistance. Therefore, it is useful for reducing power consumption and system downsizing.

Additionally, it was manufactured using Toshiba's second-generation chip design with improved reliability, reducing input capacitance, gate-input charge, and drain-to-source on-resistance. Compared to Toshiba's 1200V silicon 'insulated-gate bipolar transistor (IGBT)', turn-off switching loss and switching time (fall time) were reduced by approximately 80% and 70%, respectively, and the on-voltage characteristic was also lowered with a drain current of less than 20A.

The TW070J120B is expected to contribute to reducing power loss, increasing efficiency, and reducing equipment size in industrial applications such as large-capacity AC-DC converters, photovoltaic inverters, and large-capacity bidirectional DC-DC converters.