ST MasterGaN2, soft switching and
Optimized for active rectifier converter topology
USB-PD products can increase power density


STMicroelectronics announced on the 29th the launch of its 'MasterGaN2' device, an integrated gallium nitride (GaN) solution optimized for soft switching and active rectification converter topologies.

The two 650V normally-off GaN transistors have on-resistances of 150mΩ and 225mΩ, and when combined with a gate driver, can be used as easily as conventional silicon (Si) devices.

MasterGaN2 integrates the unique benefits of GaN and various features to further enhance the efficiency of topologies such as active clamp flyback and reduce size and weight.

The MasterGaN power system-in-package (SiP) family integrates two GaN high-electron-mobility transistors (HEMTs), associated high-voltage gate drivers, and necessary protection mechanisms into a single package.

Designers can easily connect external devices such as controllers, such as DSPs, MCUs, and FPGAs, as well as Hall sensors, directly to MasterGaN devices. The input is compatible with logic signals from 3.3 V to 15 V, simplifying circuit design, reducing bill of materials (BOM), saving installation space, and enabling easy assembly.

GaN technology is driving the development of high-speed USB-PD adapters and smartphone chargers. Using ST MasterGaN devices in these products enables charging speeds up to three times faster than conventional silicon-based solutions, while reducing size by up to 80% and weight by 70%.

Built-in protection features include low-side and high-side Under-Voltage Lockout (UVLO), gate driver interlocks, a dedicated shutdown pin, and overtemperature protection.

The 9×9×1mm GQFN package is optimized for high-voltage applications with a creepage distance greater than 2mm between the high-voltage and low-voltage pads, and is priced at $6.50 in quantities of 1,000.